NBS Special Publication, Issues 400-421U.S. Government Printing Office, 1918 |
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... values across a silicon wafer for both the bridge and van der Pauw structures . The dimen- sion refers to the active portion of the structures ; di- ameters are indicated for 3.11 and 3.30 , the length of the side of a square is ...
... values across a silicon wafer for both the bridge and van der Pauw structures . The dimen- sion refers to the active portion of the structures ; di- ameters are indicated for 3.11 and 3.30 , the length of the side of a square is ...
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... values ( explained in the text ) [ 14 ] . The current is divided by a factor which includes the electronic charge , the area of the junction , the deple- tion width and the gold density 25 PREFACE This was presented as an invited paper ...
... values ( explained in the text ) [ 14 ] . The current is divided by a factor which includes the electronic charge , the area of the junction , the deple- tion width and the gold density 25 PREFACE This was presented as an invited paper ...
Page 1
... values for the resistivity versus dopant density relation , and ( d ) improved detection methods for identi- fying defect centers which control the lifetime and leakage currents of devices . Key Words : MOS capacitors ; p - n junctions ...
... values for the resistivity versus dopant density relation , and ( d ) improved detection methods for identi- fying defect centers which control the lifetime and leakage currents of devices . Key Words : MOS capacitors ; p - n junctions ...
Page 2
... values obtained from the van der Pauw [ 4 ] structures ( 3.11 , 3.22 , and 3.30 ) are comparable , which is ex- pected since sheet resistances determined from symmetrical van der Pauw struc- ! tures are independent of geometry . Values ...
... values obtained from the van der Pauw [ 4 ] structures ( 3.11 , 3.22 , and 3.30 ) are comparable , which is ex- pected since sheet resistances determined from symmetrical van der Pauw struc- ! tures are independent of geometry . Values ...
Page 3
... values . An intercomparison of profiles for large and small diodes is shown in figure 10 where the peripheral correction brings the profiles of both diodes into agreement . Dopant densities were also determined in the collector region ...
... values . An intercomparison of profiles for large and small diodes is shown in figure 10 where the peripheral correction brings the profiles of both diodes into agreement . Dopant densities were also determined in the collector region ...
Common terms and phrases
aluminum Analysis for Silicon analyzed angstroms ARPA/NBS Workshop atoms Auger electron Auger electron spectroscopy Auger transition backscattering backside base binding energy bombardment boron Bureau of Standards chemical chemical shift collector resistivity concentration curve depth profile detector diffused dopant density effect electron beam emitter ESCA escape depth etched field plate film function gold impurity integrated circuit interface ion beam laser layer measurement metal MOS capacitor n-p-n transistor National Bureau obtained optical oxygen p-n junctions particles peak photoelectron Phys primary beam primary ion probe protons region resistor VDP resonance sample scanner scanning scattering semiconductor sensitivity sheet resistor shown in Figure signal Silicon Devices silicon nitride silicon oxides silicon surface SIMS SiO2 sodium specimen spectra spectrometer spectroscopy spectrum sputtering stoichiometry substrate Surface Analysis surface photovoltage technique Technology test structures thermal thickness tion transistor voltage wafer width X-ray yield yield curve
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