NBS Special Publication, Issues 400-421U.S. Government Printing Office, 1918 |
From inside the book
Results 1-5 of 43
Page 20
... transition layer several atomic layers thick . On the basis of this data alone , could not the excess silicon region have extended hundreds of angstroms into the oxide film . Deal : I do not think it extends that far . Most of the ...
... transition layer several atomic layers thick . On the basis of this data alone , could not the excess silicon region have extended hundreds of angstroms into the oxide film . Deal : I do not think it extends that far . Most of the ...
Page 106
... transitions are less sensitive to the change in surface composition ( 9 ) which results from differential sputtering . Next , the recoil or " knock on " phenomenon ( 10 ) ; this is an effect whereby lattice atoms are pushed deeper into ...
... transitions are less sensitive to the change in surface composition ( 9 ) which results from differential sputtering . Next , the recoil or " knock on " phenomenon ( 10 ) ; this is an effect whereby lattice atoms are pushed deeper into ...
Page 107
... transitions . For the CMA analyzer , the transmission ( n ) is linear with energy . Escape depths ( d ) in a range ... transition is detectable , the low energy gold transition at 69 eV is not . This low energy gold transition has an ...
... transitions . For the CMA analyzer , the transmission ( n ) is linear with energy . Escape depths ( d ) in a range ... transition is detectable , the low energy gold transition at 69 eV is not . This low energy gold transition has an ...
Page 109
... transitions ( approximately 20 Ă escape depth ) were also detected indicates that the debris surrounding the crater ... transition is the most sensitive to oxidation and will decrease in amplitude relative to the 387 eV peak , which is ...
... transitions ( approximately 20 Ă escape depth ) were also detected indicates that the debris surrounding the crater ... transition is the most sensitive to oxidation and will decrease in amplitude relative to the 387 eV peak , which is ...
Page 119
... transition of the two structural models . The result for two stoi- chiometries is shown in figure 3 where we , for convenience , have chosen a Lorentzian shape of each of the Auger transitions . half width in this case is slightly less ...
... transition of the two structural models . The result for two stoi- chiometries is shown in figure 3 where we , for convenience , have chosen a Lorentzian shape of each of the Auger transitions . half width in this case is slightly less ...
Common terms and phrases
aluminum Analysis for Silicon analyzed angstroms ARPA/NBS Workshop atoms Auger electron Auger electron spectroscopy Auger transition backscattering backside base binding energy bombardment boron Bureau of Standards chemical chemical shift collector resistivity concentration curve depth profile detector diffused dopant density effect electron beam emitter ESCA escape depth etched field plate film function gold impurity integrated circuit interface ion beam laser layer measurement metal MOS capacitor n-p-n transistor National Bureau obtained optical oxygen p-n junctions particles peak photoelectron Phys primary beam primary ion probe protons region resistor VDP resonance sample scanner scanning scattering semiconductor sensitivity sheet resistor shown in Figure signal Silicon Devices silicon nitride silicon oxides silicon surface SIMS SiO2 sodium specimen spectra spectrometer spectroscopy spectrum sputtering stoichiometry substrate Surface Analysis surface photovoltage technique Technology test structures thermal thickness tion transistor voltage wafer width X-ray yield yield curve
Popular passages
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