NBS Special Publication, Issues 400-421U.S. Government Printing Office, 1918 |
From inside the book
Results 1-5 of 100
Page 4
... signal to the increment in material concentration . It is , so to speak , the gain of the instrument . the output signal is meant the amplitude of the spectral peak less the background level . The background consists of all unwanted in ...
... signal to the increment in material concentration . It is , so to speak , the gain of the instrument . the output signal is meant the amplitude of the spectral peak less the background level . The background consists of all unwanted in ...
Page 22
... signal from an element in a given matrix is basically a function of three variables- ( 1 ) the geomet- ric ... signals and divi- sions to determine individual percentages produced very good agreement with the bulk composition as given by ...
... signal from an element in a given matrix is basically a function of three variables- ( 1 ) the geomet- ric ... signals and divi- sions to determine individual percentages produced very good agreement with the bulk composition as given by ...
Page 23
... signal level for each orientation , and the last column is the calculated ( 111 ) / ( 100 ) ratio . For Het the observed ratio does not fall within the range of the true ratio until an energy of 1500-2500 eV is reached . Because the ...
... signal level for each orientation , and the last column is the calculated ( 111 ) / ( 100 ) ratio . For Het the observed ratio does not fall within the range of the true ratio until an energy of 1500-2500 eV is reached . Because the ...
Page 24
... signal rises to a plateau before the 0 signal falls . It is this region of 10-20 A that is estab- lished experimentally as Si - rich . Using the Si atom density of 7.9 x 1014 at / cm2 in the thermal Si02 region as a point of calibration ...
... signal rises to a plateau before the 0 signal falls . It is this region of 10-20 A that is estab- lished experimentally as Si - rich . Using the Si atom density of 7.9 x 1014 at / cm2 in the thermal Si02 region as a point of calibration ...
Page 30
... signal and the silicon signal in a situation like this and you see one rise before the other falls I do not think that is really a possibility . The probability for the scattered particles to penetrate even several stomic thicknesses ...
... signal and the silicon signal in a situation like this and you see one rise before the other falls I do not think that is really a possibility . The probability for the scattered particles to penetrate even several stomic thicknesses ...
Common terms and phrases
aluminum Analysis for Silicon analyzed angstroms ARPA/NBS Workshop atoms Auger electron Auger electron spectroscopy Auger transition backscattering backside base binding energy bombardment boron Bureau of Standards chemical chemical shift collector resistivity concentration curve depth profile detector diffused dopant density effect electron beam emitter ESCA escape depth etched field plate film function gold impurity integrated circuit interface ion beam laser layer measurement metal MOS capacitor n-p-n transistor National Bureau obtained optical oxygen p-n junctions particles peak photoelectron Phys primary beam primary ion probe protons region resistor VDP resonance sample scanner scanning scattering semiconductor sensitivity sheet resistor shown in Figure signal Silicon Devices silicon nitride silicon oxides silicon surface SIMS SiO2 sodium specimen spectra spectrometer spectroscopy spectrum sputtering stoichiometry substrate Surface Analysis surface photovoltage technique Technology test structures thermal thickness tion transistor voltage wafer width X-ray yield yield curve
Popular passages
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