NBS Special Publication, Issues 400-421U.S. Government Printing Office, 1918 |
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... pattern NBS - 3 [ 3 ] fabricated with base ( B ) , emitter ( E ) , contact ( C ) , and metal ( M ) masks . The length of the pattern along one side is 200 mil ( 5.08 mm ) .. Base sheet resistance values across a silicon wafer for both ...
... pattern NBS - 3 [ 3 ] fabricated with base ( B ) , emitter ( E ) , contact ( C ) , and metal ( M ) masks . The length of the pattern along one side is 200 mil ( 5.08 mm ) .. Base sheet resistance values across a silicon wafer for both ...
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... pattern . The test structures used in this study are included in test pattern NBS - 3 [ 3 ] . This pattern , which is shown in figure 1 , was designed primarily for use in the evaluation of the resistivity versus dopant density relation ...
... pattern . The test structures used in this study are included in test pattern NBS - 3 [ 3 ] . This pattern , which is shown in figure 1 , was designed primarily for use in the evaluation of the resistivity versus dopant density relation ...
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evaluation of the resistivity versus dopant density relation . The overall size of the pattern is 200 mil ( 5.08 mm ) on a side , and it is repeated every 200 mill ( 5.08 mm ) over a wafer . The pattern contains diodes , transistors ...
evaluation of the resistivity versus dopant density relation . The overall size of the pattern is 200 mil ( 5.08 mm ) on a side , and it is repeated every 200 mill ( 5.08 mm ) over a wafer . The pattern contains diodes , transistors ...
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... Pattern NBS - 3 for Evaluating the Resistivity - Dopant Density Relation in Silicon , NBS Special Publication 400-22 ( in preparation ) . van der Pauw , L. J. , A Method of Measuring the Resistivity and Hall Coefficient on Lamellae of ...
... Pattern NBS - 3 for Evaluating the Resistivity - Dopant Density Relation in Silicon , NBS Special Publication 400-22 ( in preparation ) . van der Pauw , L. J. , A Method of Measuring the Resistivity and Hall Coefficient on Lamellae of ...
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... pattern NBS - 3 [ 3 ] contact ( C ) , and metal ( M ) masks . side is 200 mil ( 5.08 mm ) . fabricated with base ( B ) , emitter ( E ) , The length of the pattern along one. 6 13.
... pattern NBS - 3 [ 3 ] contact ( C ) , and metal ( M ) masks . side is 200 mil ( 5.08 mm ) . fabricated with base ( B ) , emitter ( E ) , The length of the pattern along one. 6 13.
Common terms and phrases
aluminum Analysis for Silicon analyzed angstroms ARPA/NBS Workshop atoms Auger electron Auger electron spectroscopy Auger transition backscattering backside base binding energy bombardment boron Bureau of Standards chemical chemical shift collector resistivity concentration curve depth profile detector diffused dopant density effect electron beam emitter ESCA escape depth etched field plate film function gold impurity integrated circuit interface ion beam laser layer measurement metal MOS capacitor n-p-n transistor National Bureau obtained optical oxygen p-n junctions particles peak photoelectron Phys primary beam primary ion probe protons region resistor VDP resonance sample scanner scanning scattering semiconductor sensitivity sheet resistor shown in Figure signal Silicon Devices silicon nitride silicon oxides silicon surface SIMS SiO2 sodium specimen spectra spectrometer spectroscopy spectrum sputtering stoichiometry substrate Surface Analysis surface photovoltage technique Technology test structures thermal thickness tion transistor voltage wafer width X-ray yield yield curve
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Page 35 - Standards, the Institute for Materials Research, the Institute for Applied Technology, the Institute for Computer Sciences and Technology, and the Office for Information Programs. THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consistent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essential services leading to accurate and uniform physical measurements throughout the Nation's...
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