NBS Special Publication, Issues 400-421U.S. Government Printing Office, 1918 |
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Page 12
... integrated circuits over the time period 1959-1975 ( G. E. Moore , Ref . 1 ) . Figure 1 . Representative cross - sections of two main types of semiconductor device structures . Oxygen / Silicon 1.2 02 SiO2 Si xo2 + Axo 12.
... integrated circuits over the time period 1959-1975 ( G. E. Moore , Ref . 1 ) . Figure 1 . Representative cross - sections of two main types of semiconductor device structures . Oxygen / Silicon 1.2 02 SiO2 Si xo2 + Axo 12.
Page 13
... Oxygen / Silicon 1.2 02 SiO2 Si xo2 + Axo = B ( 1 + T ) Excess ( a ) Oxygen where A 2D ( 1 / k + 1 / h ) B = 2DC * / N | ( b ) Partially Ionized Silicon T = Constant For " large times , " ≈ Bt ( c ) Figure 3 . 2.2 2.0 X For " small ...
... Oxygen / Silicon 1.2 02 SiO2 Si xo2 + Axo = B ( 1 + T ) Excess ( a ) Oxygen where A 2D ( 1 / k + 1 / h ) B = 2DC * / N | ( b ) Partially Ionized Silicon T = Constant For " large times , " ≈ Bt ( c ) Figure 3 . 2.2 2.0 X For " small ...
Page 14
... OXYGEN ( x1 ) -Si ( x1 ) CHLORINE ( x 20 ) 3000 4000 5000 SPUTTERING TIME , sec 6000 Figure 6. Cl profile in an HCl oxide deter- mined by the sputter - etching technique ( Chou et al . , Ref . 6 ) . P - CHANNEL 40.0 TYPICAL UNHARDENED ...
... OXYGEN ( x1 ) -Si ( x1 ) CHLORINE ( x 20 ) 3000 4000 5000 SPUTTERING TIME , sec 6000 Figure 6. Cl profile in an HCl oxide deter- mined by the sputter - etching technique ( Chou et al . , Ref . 6 ) . P - CHANNEL 40.0 TYPICAL UNHARDENED ...
Page 24
... oxygen response . Again at 40 Å , as shown in Figure 17 , the 0 / Si ratio is 2 near the surface and this profile agrees quite well with the 44 Å layer obtained by thick film growth and etching ( Figure 14 ) . The results shown in ...
... oxygen response . Again at 40 Å , as shown in Figure 17 , the 0 / Si ratio is 2 near the surface and this profile agrees quite well with the 44 Å layer obtained by thick film growth and etching ( Figure 14 ) . The results shown in ...
Page 28
... OXYGEN SILICON Figure 11. ISS Si responses showing lattice damage from Ne bombardment . Figure 12 . ISS responses from a 904 Å oxide layer on Si used as a standard for Si02 . 0/51 OXYGEN Figure 13 . ISS depth profile of Si02 / Si etched ...
... OXYGEN SILICON Figure 11. ISS Si responses showing lattice damage from Ne bombardment . Figure 12 . ISS responses from a 904 Å oxide layer on Si used as a standard for Si02 . 0/51 OXYGEN Figure 13 . ISS depth profile of Si02 / Si etched ...
Common terms and phrases
aluminum Analysis for Silicon analyzed angstroms ARPA/NBS Workshop atoms Auger electron Auger electron spectroscopy Auger transition backscattering backside base binding energy bombardment boron Bureau of Standards chemical chemical shift collector resistivity concentration curve depth profile detector diffused dopant density effect electron beam emitter ESCA escape depth etched field plate film function gold impurity integrated circuit interface ion beam laser layer measurement metal MOS capacitor n-p-n transistor National Bureau obtained optical oxygen p-n junctions particles peak photoelectron Phys primary beam primary ion probe protons region resistor VDP resonance sample scanner scanning scattering semiconductor sensitivity sheet resistor shown in Figure signal Silicon Devices silicon nitride silicon oxides silicon surface SIMS SiO2 sodium specimen spectra spectrometer spectroscopy spectrum sputtering stoichiometry substrate Surface Analysis surface photovoltage technique Technology test structures thermal thickness tion transistor voltage wafer width X-ray yield yield curve
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