NBS Special Publication, Issues 400-421U.S. Government Printing Office, 1918 |
From inside the book
Results 1-5 of 100
Page 1
... obtained from gated diodes and MOS capacitors , and resistivity values were obtained from collector four - probe resistors fabricated on wafers with a variety of resistivities . The measured values were combined into a resistivity ...
... obtained from gated diodes and MOS capacitors , and resistivity values were obtained from collector four - probe resistors fabricated on wafers with a variety of resistivities . The measured values were combined into a resistivity ...
Page 2
... obtained from the bridge structure are low because , in the computation of the sheet resistance , the width was ... obtain We . The base- diffusion - window width , W , was calculated from W axj . Values for W are shown in figure 4 as a ...
... obtained from the bridge structure are low because , in the computation of the sheet resistance , the width was ... obtain We . The base- diffusion - window width , W , was calculated from W axj . Values for W are shown in figure 4 as a ...
Page 2
... obtaining dopant density values from the MOS capacitor over collector , the high frequency C - V deep depletion method ... obtained from the base - collector diode ( 3.10 ) by using the junc tion C - V method [ 10 ] . Bulk resistivity ...
... obtaining dopant density values from the MOS capacitor over collector , the high frequency C - V deep depletion method ... obtained from the base - collector diode ( 3.10 ) by using the junc tion C - V method [ 10 ] . Bulk resistivity ...
Page 3
... obtained continuously from base profiles by combining the results of two test structures . The base dopant density profiles can be obtained from the emitter - base diode ( 3.9 ) with use of the junction C - V , method and the base ...
... obtained continuously from base profiles by combining the results of two test structures . The base dopant density profiles can be obtained from the emitter - base diode ( 3.9 ) with use of the junction C - V , method and the base ...
Page 18
... obtained by using the geometrical mean of the inner and outer radii of the gap between the center emitter and peripheral emitter . If the collector resistivity , f , is known from an independent measurement ( e.g. , structure 3.17 ) ...
... obtained by using the geometrical mean of the inner and outer radii of the gap between the center emitter and peripheral emitter . If the collector resistivity , f , is known from an independent measurement ( e.g. , structure 3.17 ) ...
Common terms and phrases
aluminum Analysis for Silicon analyzed angstroms ARPA/NBS Workshop atoms Auger electron Auger electron spectroscopy Auger transition backscattering backside base binding energy bombardment boron Bureau of Standards chemical chemical shift collector resistivity concentration curve depth profile detector diffused dopant density effect electron beam emitter ESCA escape depth etched field plate film function gold impurity integrated circuit interface ion beam laser layer measurement metal MOS capacitor n-p-n transistor National Bureau obtained optical oxygen p-n junctions particles peak photoelectron Phys primary beam primary ion probe protons region resistor VDP resonance sample scanner scanning scattering semiconductor sensitivity sheet resistor shown in Figure signal Silicon Devices silicon nitride silicon oxides silicon surface SIMS SiO2 sodium specimen spectra spectrometer spectroscopy spectrum sputtering stoichiometry substrate Surface Analysis surface photovoltage technique Technology test structures thermal thickness tion transistor voltage wafer width X-ray yield yield curve
Popular passages
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