NBS Special Publication, Issues 400-421U.S. Government Printing Office, 1918 |
From inside the book
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Page
... indicated for 3.11 and 3.30 , the length of the side of a square is indicated for 3.22 , and the width of the bridge structure is given for 3.28 . Base bridge and van der Pauw sheet resistor structures . The center - to - center metal ...
... indicated for 3.11 and 3.30 , the length of the side of a square is indicated for 3.22 , and the width of the bridge structure is given for 3.28 . Base bridge and van der Pauw sheet resistor structures . The center - to - center metal ...
Page
... indicated on the upper photomicrograph Normalized resistivity difference versus dopant density for n - type silicon ( 300 K ) which compares the work of Irvin [ 1 ] and Caughey - Thomas [ 11 ] . · · Figure 15. Normalized resistivity ...
... indicated on the upper photomicrograph Normalized resistivity difference versus dopant density for n - type silicon ( 300 K ) which compares the work of Irvin [ 1 ] and Caughey - Thomas [ 11 ] . · · Figure 15. Normalized resistivity ...
Page 2
... indicated in figure 6. Here Rs ( TRUE ) is the true sheet resistance and Rg ( VDP ) is the sheet resistance determined from measurements with the use of the van der Pauw formula , which appears at the top of figure 6. The curves shown ...
... indicated in figure 6. Here Rs ( TRUE ) is the true sheet resistance and Rg ( VDP ) is the sheet resistance determined from measurements with the use of the van der Pauw formula , which appears at the top of figure 6. The curves shown ...
Page 3
... indicates the presence of phosphorus pile - up at the surface . The dopant density derived with the use of the MOS capacitor Cmax - Cmin method [ 9 ] is indicated as 1.04 x 1016 cm - 3 . This value is considerably different from the ...
... indicates the presence of phosphorus pile - up at the surface . The dopant density derived with the use of the MOS capacitor Cmax - Cmin method [ 9 ] is indicated as 1.04 x 1016 cm - 3 . This value is considerably different from the ...
Page 4
... indicates that a diode is cooled to near liquid nitrogen ( LN2 ) temperature and then warmed back to room temperature ( RT ) ... indicated by the rapid rise in the current at higher temperatures , the gold acceptor center is th source of ...
... indicates that a diode is cooled to near liquid nitrogen ( LN2 ) temperature and then warmed back to room temperature ( RT ) ... indicated by the rapid rise in the current at higher temperatures , the gold acceptor center is th source of ...
Common terms and phrases
aluminum Analysis for Silicon analyzed angstroms ARPA/NBS Workshop atoms Auger electron Auger electron spectroscopy Auger transition backscattering backside base binding energy bombardment boron Bureau of Standards chemical chemical shift collector resistivity concentration curve depth profile detector diffused dopant density effect electron beam emitter ESCA escape depth etched field plate film function gold impurity integrated circuit interface ion beam laser layer measurement metal MOS capacitor n-p-n transistor National Bureau obtained optical oxygen p-n junctions particles peak photoelectron Phys primary beam primary ion probe protons region resistor VDP resonance sample scanner scanning scattering semiconductor sensitivity sheet resistor shown in Figure signal Silicon Devices silicon nitride silicon oxides silicon surface SIMS SiO2 sodium specimen spectra spectrometer spectroscopy spectrum sputtering stoichiometry substrate Surface Analysis surface photovoltage technique Technology test structures thermal thickness tion transistor voltage wafer width X-ray yield yield curve
Popular passages
Page 48 - In no case does such identification imply recommendation or endorsement by the National Bureau of Standards, nor does it imply that the material or equipment identified is necessarily the best available for the purpose.
Page 64 - Papers of interest primarily to scientists working in these fields. This section covers a broad range of physical and chemical research, with major emphasis on standards of physical measurement, fundamental constants, and properties of matter. Issued six times a year. Annual subscription: Domestic, $9.50; foreign, $11.75*.
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Page 35 - Standards, the Institute for Materials Research, the Institute for Applied Technology, the Institute for Computer Sciences and Technology, and the Office for Information Programs. THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consistent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essential services leading to accurate and uniform physical measurements throughout the Nation's...
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