NBS Special Publication, Issues 400-421U.S. Government Printing Office, 1918 |
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... gold donor located on the n - side of an ntp silicon junction for various heating rates [ 13 ] • 23 Figure 21 . Thermally stimulated current response of the gold acceptor located on the n - side of a p1n silicon junction for various ...
... gold donor located on the n - side of an ntp silicon junction for various heating rates [ 13 ] • 23 Figure 21 . Thermally stimulated current response of the gold acceptor located on the n - side of a p1n silicon junction for various ...
Page 1
... gold . This defect center was studied in n - type MOS capacitors and in both pn and ntp junctions . From thermally stimulated current measurements , the current response is very different for gold doped p * n as com- pared with ntp ...
... gold . This defect center was studied in n - type MOS capacitors and in both pn and ntp junctions . From thermally stimulated current measurements , the current response is very different for gold doped p * n as com- pared with ntp ...
Page 4
... gold donor current peak [ 13 ] occurs near 130 K. The exact peak temperature depends on the heating rate . The gold acceptor current peak [ 14 ] occurs near 220 K as shown in figure 21. This re- sponse is quite different from the gold ...
... gold donor current peak [ 13 ] occurs near 130 K. The exact peak temperature depends on the heating rate . The gold acceptor current peak [ 14 ] occurs near 220 K as shown in figure 21. This re- sponse is quite different from the gold ...
Page 5
... , A Study of the Gold Acceptor in a Silicon pn Junction and an n - type MOS Capacitor by Thermally Stimulated Current and Capacitance Measurements ( to be submitted for publication ) . 28 O 3164 19 20 21 23 12 72 24 5 Figure.
... , A Study of the Gold Acceptor in a Silicon pn Junction and an n - type MOS Capacitor by Thermally Stimulated Current and Capacitance Measurements ( to be submitted for publication ) . 28 O 3164 19 20 21 23 12 72 24 5 Figure.
Page 23
... 0.61 0.41 0 100 120 140 160 TEMPERATURE ( K ) Figure 20 . Thermally stimulated current response of the gold donor located on the n - side of an ntp silicon junction for various heating rates [ 13 ] . CURRENT ( pA ) CURRENT ( pA ) 9.5 K 23.
... 0.61 0.41 0 100 120 140 160 TEMPERATURE ( K ) Figure 20 . Thermally stimulated current response of the gold donor located on the n - side of an ntp silicon junction for various heating rates [ 13 ] . CURRENT ( pA ) CURRENT ( pA ) 9.5 K 23.
Common terms and phrases
aluminum Analysis for Silicon analyzed angstroms ARPA/NBS Workshop atoms Auger electron Auger electron spectroscopy Auger transition backscattering backside base binding energy bombardment boron Bureau of Standards chemical chemical shift collector resistivity concentration curve depth profile detector diffused dopant density effect electron beam emitter ESCA escape depth etched field plate film function gold impurity integrated circuit interface ion beam laser layer measurement metal MOS capacitor n-p-n transistor National Bureau obtained optical oxygen p-n junctions particles peak photoelectron Phys primary beam primary ion probe protons region resistor VDP resonance sample scanner scanning scattering semiconductor sensitivity sheet resistor shown in Figure signal Silicon Devices silicon nitride silicon oxides silicon surface SIMS SiO2 sodium specimen spectra spectrometer spectroscopy spectrum sputtering stoichiometry substrate Surface Analysis surface photovoltage technique Technology test structures thermal thickness tion transistor voltage wafer width X-ray yield yield curve
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