NBS Special Publication, Issues 400-421U.S. Government Printing Office, 1918 |
From inside the book
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Page 3
... energy loss serves to identify the impurity atom through its mass . Because of its low energy , ISS is extremely surface sensitive . A most important aspect of RBS is that it is the only quantitative and essentially non- destructive ...
... energy loss serves to identify the impurity atom through its mass . Because of its low energy , ISS is extremely surface sensitive . A most important aspect of RBS is that it is the only quantitative and essentially non- destructive ...
Page 21
... ENERGY ION SCATTERING SPECTROMETRY STUDIES OF Si , Si02 , AND RELATED MATERIALS William L. Harrington RCA Laboratories Princeton , New Jersey 08540 . c / s He * - ALKALI STRONTIUM SILICATE. INTRODUCTION Although low energy ion scattering ...
... ENERGY ION SCATTERING SPECTROMETRY STUDIES OF Si , Si02 , AND RELATED MATERIALS William L. Harrington RCA Laboratories Princeton , New Jersey 08540 . c / s He * - ALKALI STRONTIUM SILICATE. INTRODUCTION Although low energy ion scattering ...
Page 23
... energy of 1500-2500 eV is reached . Because the true ratio is observed at these higher energies , one can deduce that no detectable damage has been done to the crystal lattice by He bom- bardment . At low energies the ratio ap- proaches ...
... energy of 1500-2500 eV is reached . Because the true ratio is observed at these higher energies , one can deduce that no detectable damage has been done to the crystal lattice by He bom- bardment . At low energies the ratio ap- proaches ...
Page 24
... energy ISS . At these thicknesses the integration effect of the high energy technique is of little conse- quence . Figure 16 shows a large change when growth proceeds from 7 to 17 A * , but in this experiment the ratio is still between ...
... energy ISS . At these thicknesses the integration effect of the high energy technique is of little conse- quence . Figure 16 shows a large change when growth proceeds from 7 to 17 A * , but in this experiment the ratio is still between ...
Page 25
... energy backscattering , low energy ISS and SIMS : ELECTROSTATIC ANALYSER ELECTRON MULTIPLIER SAMPLE TURRET L ROTARY SAMPLE POSITIONER ION GUN SAMPLE Figure 1. Schematic diagram and formulae of the ion scattering process . HIGH ENERGY ...
... energy backscattering , low energy ISS and SIMS : ELECTROSTATIC ANALYSER ELECTRON MULTIPLIER SAMPLE TURRET L ROTARY SAMPLE POSITIONER ION GUN SAMPLE Figure 1. Schematic diagram and formulae of the ion scattering process . HIGH ENERGY ...
Common terms and phrases
aluminum Analysis for Silicon analyzed angstroms ARPA/NBS Workshop atoms Auger electron Auger electron spectroscopy Auger transition backscattering backside base binding energy bombardment boron Bureau of Standards chemical chemical shift collector resistivity concentration curve depth profile detector diffused dopant density effect electron beam emitter ESCA escape depth etched field plate film function gold impurity integrated circuit interface ion beam laser layer measurement metal MOS capacitor n-p-n transistor National Bureau obtained optical oxygen p-n junctions particles peak photoelectron Phys primary beam primary ion probe protons region resistor VDP resonance sample scanner scanning scattering semiconductor sensitivity sheet resistor shown in Figure signal Silicon Devices silicon nitride silicon oxides silicon surface SIMS SiO2 sodium specimen spectra spectrometer spectroscopy spectrum sputtering stoichiometry substrate Surface Analysis surface photovoltage technique Technology test structures thermal thickness tion transistor voltage wafer width X-ray yield yield curve
Popular passages
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Page 64 - Papers of interest primarily to scientists working in these fields. This section covers a broad range of physical and chemical research, with major emphasis on standards of physical measurement, fundamental constants, and properties of matter. Issued six times a year. Annual subscription: Domestic, $9.50; foreign, $11.75*.
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Page 41 - NATIONAL BUREAU OF STANDARDS The National Bureau of Standards' was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation's science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides...
Page 35 - Standards, the Institute for Materials Research, the Institute for Applied Technology, the Institute for Computer Sciences and Technology, and the Office for Information Programs. THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consistent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essential services leading to accurate and uniform physical measurements throughout the Nation's...
Page 32 - Building Science Series — Disseminates technical information developed at the Bureau on building materials, components, systems, and whole structures. The series presents research results, test methods, and performance criteria related to the structural and environmental functions and the durability and safety characteristics of building elements and systems.