NBS Special Publication, Issues 400-421U.S. Government Printing Office, 1918 |
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... density for n - type silicon ( 300 K ) which compares the work of Irvin [ 1 ] and Caughey - Thomas [ 11 ] . · · Figure 15. Normalized resistivity difference versus dopant density for n - type silicon ( 300 K ) which compares ...
... density for n - type silicon ( 300 K ) which compares the work of Irvin [ 1 ] and Caughey - Thomas [ 11 ] . · · Figure 15. Normalized resistivity difference versus dopant density for n - type silicon ( 300 K ) which compares ...
Page 1
... density relation , and ( d ) improved detection methods for identi- fying defect centers which control the lifetime and leakage currents of devices . Key Words : MOS capacitors ; p - n junctions ; resis- tivity of silicon ...
... density relation , and ( d ) improved detection methods for identi- fying defect centers which control the lifetime and leakage currents of devices . Key Words : MOS capacitors ; p - n junctions ; resis- tivity of silicon ...
Page 3
... DENSITY Dopant densities were determined in the collector ( or bulk ) region of a base- collector diode with the use of the junction C - V method [ 7 ] . As shown in figure 7 , the diode ( 3.10 ) is gated and contains an inversion stop ...
... DENSITY Dopant densities were determined in the collector ( or bulk ) region of a base- collector diode with the use of the junction C - V method [ 7 ] . As shown in figure 7 , the diode ( 3.10 ) is gated and contains an inversion stop ...
Page 4
... density profiles . These structures ( 3.8 and 3.10 ) are shown in figures 7 and 11 , and the class of measurements used to detect the defects is the thermally stimulated current measurements . This measurement method [ 12 ] is outlined ...
... density profiles . These structures ( 3.8 and 3.10 ) are shown in figures 7 and 11 , and the class of measurements used to detect the defects is the thermally stimulated current measurements . This measurement method [ 12 ] is outlined ...
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DOPANT DENSITY , N ( B ) ( cm3 ) 1015 -15 -8.2 -30 -45 VG = 30 V 0 -5.5 1014 0 2 4 6 8 10 12 DISTANCE FROM JUNCTION , B ( μm ) Figure 8 . Junction C - V apparent dopant profiles taken with the use of the gated diode ( 3.10 ) shown in ...
DOPANT DENSITY , N ( B ) ( cm3 ) 1015 -15 -8.2 -30 -45 VG = 30 V 0 -5.5 1014 0 2 4 6 8 10 12 DISTANCE FROM JUNCTION , B ( μm ) Figure 8 . Junction C - V apparent dopant profiles taken with the use of the gated diode ( 3.10 ) shown in ...
Common terms and phrases
aluminum Analysis for Silicon analyzed angstroms ARPA/NBS Workshop atoms Auger electron Auger electron spectroscopy Auger transition backscattering backside base binding energy bombardment boron Bureau of Standards chemical chemical shift collector resistivity concentration curve depth profile detector diffused dopant density effect electron beam emitter ESCA escape depth etched field plate film function gold impurity integrated circuit interface ion beam laser layer measurement metal MOS capacitor n-p-n transistor National Bureau obtained optical oxygen p-n junctions particles peak photoelectron Phys primary beam primary ion probe protons region resistor VDP resonance sample scanner scanning scattering semiconductor sensitivity sheet resistor shown in Figure signal Silicon Devices silicon nitride silicon oxides silicon surface SIMS SiO2 sodium specimen spectra spectrometer spectroscopy spectrum sputtering stoichiometry substrate Surface Analysis surface photovoltage technique Technology test structures thermal thickness tion transistor voltage wafer width X-ray yield yield curve
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