NBS Special Publication, Issues 400-421U.S. Government Printing Office, 1918 |
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Page
... collector diode ( 3.10 ) Figure 8 . Figure 9 . Junction C - V apparent dopant profiles taken with the use of the gated diode ( 3.10 ) shown in figure 7 biased with various gate voltages , VG · Cross sectional view of the small base ...
... collector diode ( 3.10 ) Figure 8 . Figure 9 . Junction C - V apparent dopant profiles taken with the use of the gated diode ( 3.10 ) shown in figure 7 biased with various gate voltages , VG · Cross sectional view of the small base ...
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... collector gated diodes shown in figures 7 and 9. The corrected profiles illustrate the importance of the peripheral capacitance correction ( wafer B12Ph - 1 ) Cross sectional view of the collector MOS capacitor ( 3.8 ) .. MOS capacitor ...
... collector gated diodes shown in figures 7 and 9. The corrected profiles illustrate the importance of the peripheral capacitance correction ( wafer B12Ph - 1 ) Cross sectional view of the collector MOS capacitor ( 3.8 ) .. MOS capacitor ...
Page 1
... collector regions , and the identity of defect centers such as gold . The discussion of diffused layers involves the intercomparison , design , and over - etch of sheet resistors . Simple and economical sheet resistance measure- ments ...
... collector regions , and the identity of defect centers such as gold . The discussion of diffused layers involves the intercomparison , design , and over - etch of sheet resistors . Simple and economical sheet resistance measure- ments ...
Page 2
... collector gated diode ( 3.14 ) , the collector MOS capaci- tor ( 3.8 ) , the collector four - probe resistor ( 3.17 ) , and a variety of sheet resistors ( 3.11 , 3.22 , 3.28 , and 3.30 ) . 2 . DIFFUSED LAYER SHEET RESISTANCE Four sheet ...
... collector gated diode ( 3.14 ) , the collector MOS capaci- tor ( 3.8 ) , the collector four - probe resistor ( 3.17 ) , and a variety of sheet resistors ( 3.11 , 3.22 , 3.28 , and 3.30 ) . 2 . DIFFUSED LAYER SHEET RESISTANCE Four sheet ...
Page 3
... collector region of a collector MOS capacitor ( 3.8 ) as depicted in figure 11 with the use of the MOS capacitor C - V deep depletion method [ 8 ] . A dopant profile shown in figure 12 indicates the presence of phosphorus pile - up at ...
... collector region of a collector MOS capacitor ( 3.8 ) as depicted in figure 11 with the use of the MOS capacitor C - V deep depletion method [ 8 ] . A dopant profile shown in figure 12 indicates the presence of phosphorus pile - up at ...
Common terms and phrases
aluminum Analysis for Silicon analyzed angstroms ARPA/NBS Workshop atoms Auger electron Auger electron spectroscopy Auger transition backscattering backside base binding energy bombardment boron Bureau of Standards chemical chemical shift collector resistivity concentration curve depth profile detector diffused dopant density effect electron beam emitter ESCA escape depth etched field plate film function gold impurity integrated circuit interface ion beam laser layer measurement metal MOS capacitor n-p-n transistor National Bureau obtained optical oxygen p-n junctions particles peak photoelectron Phys primary beam primary ion probe protons region resistor VDP resonance sample scanner scanning scattering semiconductor sensitivity sheet resistor shown in Figure signal Silicon Devices silicon nitride silicon oxides silicon surface SIMS SiO2 sodium specimen spectra spectrometer spectroscopy spectrum sputtering stoichiometry substrate Surface Analysis surface photovoltage technique Technology test structures thermal thickness tion transistor voltage wafer width X-ray yield yield curve
Popular passages
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