NBS Special Publication, Issues 400-421U.S. Government Printing Office, 1918 |
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... ( explained in the text ) [ 14 ] . The current is divided by a factor which includes the electronic charge , the area of the junction , the deple- tion width and the gold density 25 PREFACE This was presented as an invited paper by M. iv.
... ( explained in the text ) [ 14 ] . The current is divided by a factor which includes the electronic charge , the area of the junction , the deple- tion width and the gold density 25 PREFACE This was presented as an invited paper by M. iv.
Page 4
... charges defects with majority carriers ( electrons for n - type or holes for p - type ) . Reverse bias is applied ... charged . This is illustrated in figure 23 where for G 1 all defects in the depletion region are initially = charged ...
... charges defects with majority carriers ( electrons for n - type or holes for p - type ) . Reverse bias is applied ... charged . This is illustrated in figure 23 where for G 1 all defects in the depletion region are initially = charged ...
Page 25
... factor values ( explained in the text ) [ 14 ] . The current is divided by a factor which includes the elec- tronic charge , the area of the junction , the depletion width and the gold density . NBS - 214A ( REV . 7-73 ) U.S. DEPT 25 0.4.
... factor values ( explained in the text ) [ 14 ] . The current is divided by a factor which includes the elec- tronic charge , the area of the junction , the depletion width and the gold density . NBS - 214A ( REV . 7-73 ) U.S. DEPT 25 0.4.
Page 20
... charge and r is the scattering factor [ 8 ] , [ 9 ] . The recommended measurement procedures for these measurements are described elsewhere [ 13 ] . Scribe Line Scribe Line 5 . MOS CAPACITORS 5.1 . MOS Capacitor Over Collector. 20 16 ...
... charge and r is the scattering factor [ 8 ] , [ 9 ] . The recommended measurement procedures for these measurements are described elsewhere [ 13 ] . Scribe Line Scribe Line 5 . MOS CAPACITORS 5.1 . MOS Capacitor Over Collector. 20 16 ...
Page 21
... charge , and ni is the intrinsic carrier concentration . The value for N calculated from this method is a surface value which may be different from the bulk value due to dopant redistribution during oxidation [ 7 ] . To determine the ...
... charge , and ni is the intrinsic carrier concentration . The value for N calculated from this method is a surface value which may be different from the bulk value due to dopant redistribution during oxidation [ 7 ] . To determine the ...
Common terms and phrases
aluminum Analysis for Silicon analyzed angstroms ARPA/NBS Workshop atoms Auger electron Auger electron spectroscopy Auger transition backscattering backside base binding energy bombardment boron Bureau of Standards chemical chemical shift collector resistivity concentration curve depth profile detector diffused dopant density effect electron beam emitter ESCA escape depth etched field plate film function gold impurity integrated circuit interface ion beam laser layer measurement metal MOS capacitor n-p-n transistor National Bureau obtained optical oxygen p-n junctions particles peak photoelectron Phys primary beam primary ion probe protons region resistor VDP resonance sample scanner scanning scattering semiconductor sensitivity sheet resistor shown in Figure signal Silicon Devices silicon nitride silicon oxides silicon surface SIMS SiO2 sodium specimen spectra spectrometer spectroscopy spectrum sputtering stoichiometry substrate Surface Analysis surface photovoltage technique Technology test structures thermal thickness tion transistor voltage wafer width X-ray yield yield curve
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