NBS Special Publication, Issues 400-421U.S. Government Printing Office, 1918 |
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Page 38
... aluminum metalliza- tion is indicated by the spikes protruding from the metal . A B C D E F G FH Хос Xob Xoe Xm Figure 6. The surface contour of the surface profilometer structure 3.29 . The vertical scale factor is 50.0 nm / division ...
... aluminum metalliza- tion is indicated by the spikes protruding from the metal . A B C D E F G FH Хос Xob Xoe Xm Figure 6. The surface contour of the surface profilometer structure 3.29 . The vertical scale factor is 50.0 nm / division ...
Page 8
... proposed solutions include , optimizing oxidation conditions , incorporating species such as aluminum or chromium in the oxide , or even the use of mixed oxides or dielectrics . The need for developing analytical beam techniques for.
... proposed solutions include , optimizing oxidation conditions , incorporating species such as aluminum or chromium in the oxide , or even the use of mixed oxides or dielectrics . The need for developing analytical beam techniques for.
Page 10
... aluminum oxide and phosphosilicate glass . While the use of these deposited di- electrics provides improved ... aluminum , but lately aluminum alloys have been used , as well as inert metals ( Pt , Au ) , refractory metals ( Mo , W ) and ...
... aluminum oxide and phosphosilicate glass . While the use of these deposited di- electrics provides improved ... aluminum , but lately aluminum alloys have been used , as well as inert metals ( Pt , Au ) , refractory metals ( Mo , W ) and ...
Page 13
... aluminum evaporated " from resistance heated tungsten filament ; Nion ~ 1.6 × 1012 / cm2 ( Kriegler and Devenyi , Ref . 5 ) . -AVFB ( V ) Figure 4. Ratio of oxygen to silicon vs. oxide thickness for thermal and anodic films ( Sigmon et ...
... aluminum evaporated " from resistance heated tungsten filament ; Nion ~ 1.6 × 1012 / cm2 ( Kriegler and Devenyi , Ref . 5 ) . -AVFB ( V ) Figure 4. Ratio of oxygen to silicon vs. oxide thickness for thermal and anodic films ( Sigmon et ...
Page 14
... 15.0 10.0 -5.0 0.0 5.0 10.0 15.0 WESTINGHOUSE , NRL ) HARDENED OXIDE AND ALUMINUM IMPLANTATION GATE VOLTAGE DURING IRRADIATION ( Volts ) Figure 7 . Radiation hardening of MOS devices ( Gwyn , Ref . 7 ) . 7 . Figure 8 . A B 5min 5 x 14.
... 15.0 10.0 -5.0 0.0 5.0 10.0 15.0 WESTINGHOUSE , NRL ) HARDENED OXIDE AND ALUMINUM IMPLANTATION GATE VOLTAGE DURING IRRADIATION ( Volts ) Figure 7 . Radiation hardening of MOS devices ( Gwyn , Ref . 7 ) . 7 . Figure 8 . A B 5min 5 x 14.
Common terms and phrases
aluminum Analysis for Silicon analyzed angstroms ARPA/NBS Workshop atoms Auger electron Auger electron spectroscopy Auger transition backscattering backside base binding energy bombardment boron Bureau of Standards chemical chemical shift collector resistivity concentration curve depth profile detector diffused dopant density effect electron beam emitter ESCA escape depth etched field plate film function gold impurity integrated circuit interface ion beam laser layer measurement metal MOS capacitor n-p-n transistor National Bureau obtained optical oxygen p-n junctions particles peak photoelectron Phys primary beam primary ion probe protons region resistor VDP resonance sample scanner scanning scattering semiconductor sensitivity sheet resistor shown in Figure signal Silicon Devices silicon nitride silicon oxides silicon surface SIMS SiO2 sodium specimen spectra spectrometer spectroscopy spectrum sputtering stoichiometry substrate Surface Analysis surface photovoltage technique Technology test structures thermal thickness tion transistor voltage wafer width X-ray yield yield curve
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