APPENDIX E SOLID STATE TECHNOLOGY & FABRICATION SERVICES Technical services in areas of competence are provided to other NBS activities and other government agencies as they are requested. Usually these are short-term, specialized services that cannot be obtained through normal commercial channels. Such services provided during this and the previous reporting period, which are listed below, indicate the kinds of technology available to the program. MOS capacitors with gates transparent to ultraviolet radiation were fabricated for the Harry Diamond Laboratories. E.2. Oxidation (Y. M. Liu and J. Krawczyk) Silicon wafers were oxidized for the NBS Polymers Division for ellipsometer studies. E.3. Metal Evaporation (J. Krawczyk) Aluminum films of various thickness were vacuum evaporated in two stages on several quartz substrates. These were for use in metal-vacuum-metal tunneling experiments for the NBS Mechanics Division. E.4. Scanning Electron Microscopy (W. J. Keery) Samples of gypsum wall board which had been exposed to fire damage were examined for the Fire Safety Engineering Division. A portion of a lunar sample was examined with Dr. P. Bell of Carnegie Institute. Several samples of glass plates coated with an optically transparent tin oxide film were examined for the NBS Optics and Micrometrology Section. These samples were to be substrates for photomask line width standards. The coatings were poor and the SEM was crucial in diagnosing the causes and developing modifications to the procedures to be used by the coating supplier. Several crystals of high-resistivity silicon were evaluated for Eglin Air Force Base. SAMSOP.O. Box 92960, Worldway Postal Center, Los Angeles, 8. Performing Organ. Report Ni 10. Project/Task/Work Unit No. 11. Contract/Grant ARPA Order 13% 13. Type of Report & Period 14. Sponsoring Agency Code 16. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant bibliography or literature survey, mention it here.) This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Both in-house and contract efforts are included. The emphasis is on silicon device technologies. Principal accomplishments during this reporting period included preliminary results of a systematic study of the effects of surface preparation on spreading resistance messurements; (2) development of an optical test for surface quality of sapphire; (3) development of a basis for an exposure sensitivity specification for photoresists; and (4) development of a modular cell concept for test structure design and layout. Also reported are the results of work on four-probe resistivity measurements, comparison of techniques for surface analysis, ion microprobe mass analysis, analysis of process chemicals vi flame emission spectrometry, redistribution profiles, thermally stimulated current response of interface stat bias-temperature stress test measurements on MOS capacitors, a high voltage capacitance-voltage method for mer suring characteristics of thick insulator films, hydrogen chloride oxidation, ion implantation parameters, methods for determining integrity of passivation overcoats, measurement of free sodium in an oxidation furnac by resonance fluorescence, a square array collector resistor test structure, an electrical alignment test st ture, two dimensional wafer maps, test pattern design and analysis for silicon-on-sapphire MOS device techno ogies, a nondestructive acoustic emission test for beam-lead bonds, wire bond pull test, bondability of dope aluminum metallizations, leakage into double hermetic enclosures, a static expansion dry gas gross leak test. correlation of moisture infusion in semiconductor packages with leak size and device reliability, an automatas scanning low-energy electron probe, an optical flying-spot scanner, scanning electron microscopy, scanning acoustic microscopy, and thermal resistance measurements on power transistors and simple integrated circuits. Supplementary data concerning staff, publications, workshops and symposia, standards committee activities, technical services are also included as appendices. 17. KEY WORDS (six to twelve entries; alphabetical order; capitalize only the first letter of the first key word unless a prope name; separated by semicolons) Acoustic emission; Auger electron spectroscopy; beam-lead bonds; bias-temperature stress test; boron redistribution; capacitance-voltage methods; dopant profiles; electrical properties; electronics; four-probe method; hermeticity; interface states; ion implantation; ion microprobe mass analysis; leak tests; measurement methods; microelectronics; moisture infusion; optical flying-spot scanner; passivation overcoats; photoresist; pull test; resistivity; scanning acoustic microscope; scanning electron microscope; scanning low energy electron probe; semiconductor devices; semiconductor materials; semiconductor process control; silicon; silicon dioxide; silicon on sapphire; spreading resistance; test patterns; thermal resistance; thermally stimulated current; ultrasonic wire bonding; voltage contrast mode; X-ray photoelectron spectroscop 19. SECURITY CLASS XX Unlimited (THIS REPORT) 18. AVAILABILITY For Official Distribution. Do Not Release to NTIS X Order From Sup. of Doc., U.S. Government Printing Office X Order From National Technical Information Service (NTIS) UNCL ASSIFIED 20. SECURITY CLASS UNCLASSIFIED 21. NO. OF PA 87 22. Price USCOMM-DC 29 Announcement of New Publications on Superintendent of Documents, Government Printing Office, Dear Sir: Please add my name to the announcement list of new publications to be issued in the series: National Bureau of Standards Special Publication 400-. |