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Figure 2.

Complexity of silicon integrated

circuits over the time period 1959-1975 (G. E. Moore, Ref. 1).

Figure 1.

Representative cross-sections of

two main types of semiconductor device structures.

Oxygen/Silicon

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Figure 3. Kinetics of the thermal oxidation of silicon, including the general relationship.

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Figure 4. Ratio of oxygen to silicon vs. oxide thickness for thermal and anodic films (Sigmon et al., Ref. 4).

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Figure 8.

Comparison of early MOS transistors (1964) and present day calculator chip. Latter dimensions are 150 x 180 mils.

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Figure 9.

Copper-decorated Si02 defects in two silicon wafers as seen after application of successively increasing oxide fields. The defects were caused by failure of two types of photoresist (A and B) on prolonged exposure to buffered HF (Kern, Ref. 8).

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