Emitter Sheet Resistor (B), Structure 3.27 Metal Sheet Resistor (VDP), Structure 3.20 Metal Step-Coverage Resistor, Structure 3.33 Collector Resistor (FP, CS), Structure 3.1 Test pattern NBS-3 fabricated with the BASE (B), EMITTER An illustration of the notation used in the cross sec- tional view of a test structure. The distance between Etch-control structure where the regions within the squares The surface contour of the surface profilometer structure 3.29. The vertical scale factor is 50.0 nm/division and the horizontal scale factor is approximately 10 μm/divi- 38 PREFACE The work was conducted as part of the Semiconductor Technology Program at the National Bureau of Standards. Portions of this work were supported by the Defense Nuclear Agency (IACRO 75-816), Defense Advanced Research Projects Agency (Order No. 2397), U.S. Navy Strategic Systems Project Office (IPR SP-75-4), and the NBS. In the semiconductor industry it is common practice to design photomasks in English units. The photomasks used in this study were laid out in English units. The equivalent metric unit is given in parentheses; in some cases the equivalent is rounded off to an appropriate number of significant figures. MICROELECTRONIC TEST PATTERN NBS-3 FOR EVALUATING THE RESISTIVITY-DOPANT DENSITY RELATIONSHIP OF SILICON by Martin G. Buehler Abstract: Test pattern NBS-3 is a microelectronic The pattern was designed primarily to aid in the evaluation The structures are arranged in a square pattern 200 mil Key Words: Dopant density; microelectronics; MOS This test pattern follows in a series of microelectronic test patterns intended for use in the design, process control, and product assurance of discrete devices and integrated circuits. The use of these patterns by manufacturers is expected to lead to lower cost and more reliable electronic components. When fully developed, they are intended to be utilized by the buyers of microelectronic components in purchase specifications. The previous pattern, NBS-2 [1], was designed so that we could fabricate various test structures needed for the development of various measurement methods. Test pattern NBS-3 was designed primarily to evaluate the resistivity versus dopant density relation in n- and p-type silicon. Other secondary purposes include the evaluation of test structures for use as process control tools and the development of new and improved test structures. The purpose of this report is to describe the test structures found on test pattern NBS-3, to indicate the test methods associated with the dopant density and resistivity |