Figure 4.

Base-diffusion-window width across three silicon wafers

etched for three, six, and nine minutes and measured by electrical and photographic methods.

Figure 5. The orthogonal van der Pauw sheet resistor structure and its mathematical equivalent geometry. The dimension S = 1.5 mil (38 um), A/S = 1/3, and D/S = 1/6.

Figure 6. Influence of geometrical factors on the orthogonal van der Pauw sheet resistance measurement as determined by a theoretical calculation. In the van der Pauw formula, Rs (VDP), AV is V1- V2 for a current I passed into I1 and out of 12 as shown in the van der Pauw structure of figure 3.

Figure 7. Cross sectional view of the large base-collector diode (3.10).

Figure 8.

Junction C-V apparent dopant profiles taken with the

use of the gated diode (3.10) shown in figure 7 biased with vari

ous gate voltages, VG.