NBS Special PublicationU.S. Department of Commerce, National Bureau of Standards, 1964 - 9 pages |
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Page 1
... substrate are of opposite conductivity type ; the program has been proven , however , on diodes diffused in epitaxial material in which the layer and substrate are of the same conductivity type and on diodes diffused in bulk mate- rial ...
... substrate are of opposite conductivity type ; the program has been proven , however , on diodes diffused in epitaxial material in which the layer and substrate are of the same conductivity type and on diodes diffused in bulk mate- rial ...
Page 4
... substrate and relaxation in the epitaxial layer , and calculate the layer thickness from the intersection of the two fits . Photolithography Work in the task which has been initiated to develop procedures for primary line width ...
... substrate and relaxation in the epitaxial layer , and calculate the layer thickness from the intersection of the two fits . Photolithography Work in the task which has been initiated to develop procedures for primary line width ...
Page 22
... substrate dopant density N = 2.2 x a n + P n + - Vref Vps Vid V $ 2 Vig TO INVERTER Vog V 1 Vsub V $ 3 0.5 mil ( 13μm ) p + CHANNEL STOP CONTACT METAL Figure 15. A topographic view and cross section of an n - channel , three- phase ...
... substrate dopant density N = 2.2 x a n + P n + - Vref Vps Vid V $ 2 Vig TO INVERTER Vog V 1 Vsub V $ 3 0.5 mil ( 13μm ) p + CHANNEL STOP CONTACT METAL Figure 15. A topographic view and cross section of an n - channel , three- phase ...
Page 23
... substrate ) from the measurement , but the capacitances between the phase three metallization and the p channel stop under the thin , gate oxide , the p channel stop under the thick field oxide , and the p- substrate under the thick ...
... substrate ) from the measurement , but the capacitances between the phase three metallization and the p channel stop under the thin , gate oxide , the p channel stop under the thick field oxide , and the p- substrate under the thick ...
Page 25
... substrate at a frequency of 125 kHz . The input and output gates were held at +15 V when injecting or extracting charge from the channel ; other- wise they were held at zero bias . In addi- tion , the input diode was slightly forward ...
... substrate at a frequency of 125 kHz . The input and output gates were held at +15 V when injecting or extracting charge from the channel ; other- wise they were held at zero bias . In addi- tion , the input diode was slightly forward ...
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aluminum analysis angle Appendix applied automation bond pull test Bureau of Standards calibration capacitance Center conversion loss curve detector determined device under test diffusion diode dopant density edge effect electrical electron beam emitter energy epitaxial error eyepiece fabrication filar frequency germanium heating impurity industry input integrated circuits intermediate-frequency junction temperature Laboratory layer leak loop height mask Materials measured pull strength ment method microscope mixer modulation MOS capacitor National Bureau NBS Spec noise noise figure obtained operating optical output oxide p-n junction parameters percent PHOTOLITHOGRAPHY photomask plot Power Transistors PRINT probe process control Publ Radiation region Resistance Measurements resistor scanning electron microscope semiconductor devices Semiconductor Measurement Technology sheet resistance shown in figure silicon silicon dioxide specimen Subcommittee substrate surface switching Technical techniques test patterns test structures thermal resistance thickness tion two-level bond values voltage wafer wire bonds