NBS Special PublicationU.S. Department of Commerce, National Bureau of Standards, 1964 - 9 pages |
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Page 9
... obtained . In line 1550 the con- tinued fraction is multiplied by the pre - factor indicated in eq ( 15 ) to get J1 = erfc ( E ) . Each approximation of the continued fraction is expressed as a quotient of two expressions ( line 1526 ) ...
... obtained . In line 1550 the con- tinued fraction is multiplied by the pre - factor indicated in eq ( 15 ) to get J1 = erfc ( E ) . Each approximation of the continued fraction is expressed as a quotient of two expressions ( line 1526 ) ...
Page 2
... obtained through normal commercial channels . To in- dicate the kinds of technology available to the Program , such services provided during the period covered by this report are listed in Appendix E. Particularly significant ...
... obtained through normal commercial channels . To in- dicate the kinds of technology available to the Program , such services provided during the period covered by this report are listed in Appendix E. Particularly significant ...
Page 12
... obtained from this specimen of initially phosphorus - doped sili- con is in excellent agreement with an aver- age activation energy of 0.3617 ± 0.0011 eV measured previously on four initially boron- doped specimens diffused with gold ...
... obtained from this specimen of initially phosphorus - doped sili- con is in excellent agreement with an aver- age activation energy of 0.3617 ± 0.0011 eV measured previously on four initially boron- doped specimens diffused with gold ...
Page 19
... obtaining values , difficulties can be encountered with the MOS capacitor ( 8 ) in that it measures at the surface of the silicon where the dop- ant density may be altered by the oxidation process . Values obtained from the Hall ef ...
... obtaining values , difficulties can be encountered with the MOS capacitor ( 8 ) in that it measures at the surface of the silicon where the dop- ant density may be altered by the oxidation process . Values obtained from the Hall ef ...
Page 20
... obtained from base profiles by combining the results of two test structures . The base dopant density profile can be obtained from the emitter - base diode ( 9 ) , and the base Number Test Structurea TEST PATTERNS Table 3 Planar Test ...
... obtained from base profiles by combining the results of two test structures . The base dopant density profile can be obtained from the emitter - base diode ( 9 ) , and the base Number Test Structurea TEST PATTERNS Table 3 Planar Test ...
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aluminum analysis angle Appendix applied automation bond pull test Bureau of Standards calibration capacitance Center conversion loss curve detector determined device under test diffusion diode dopant density edge effect electrical electron beam emitter energy epitaxial error eyepiece fabrication filar frequency germanium heating impurity industry input integrated circuits intermediate-frequency junction temperature Laboratory layer leak loop height mask Materials measured pull strength ment method microscope mixer modulation MOS capacitor National Bureau NBS Spec noise noise figure obtained operating optical output oxide p-n junction parameters percent PHOTOLITHOGRAPHY photomask plot Power Transistors PRINT probe process control Publ Radiation region Resistance Measurements resistor scanning electron microscope semiconductor devices Semiconductor Measurement Technology sheet resistance shown in figure silicon silicon dioxide specimen Subcommittee substrate surface switching Technical techniques test patterns test structures thermal resistance thickness tion two-level bond values voltage wafer wire bonds