NBS Special PublicationU.S. Department of Commerce, National Bureau of Standards, 1964 - 9 pages |
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... Frequency - Laboratory Astrophysics - Cryogenics ' . THE INSTITUTE FOR MATERIALS RESEARCH conducts materials research leading to improved methods of measurement , standards , and data on the properties of well - characterized materials ...
... Frequency - Laboratory Astrophysics - Cryogenics ' . THE INSTITUTE FOR MATERIALS RESEARCH conducts materials research leading to improved methods of measurement , standards , and data on the properties of well - characterized materials ...
Page 44
... frequency capacitance - voltage characteristics of a p - MOS capacitor and an n - channel , 32 - bit CCD connected as an MOS capacitor 17 . 18 . 19 . 20 . • • zero Pulse height of a " one " preceded by 9 zeros as a function of the ...
... frequency capacitance - voltage characteristics of a p - MOS capacitor and an n - channel , 32 - bit CCD connected as an MOS capacitor 17 . 18 . 19 . 20 . • • zero Pulse height of a " one " preceded by 9 zeros as a function of the ...
Page 24
... frequency capacitance- voltage characteristics of a p - MOS capacitor ( Co 60.3 pF ) ( A ) and an n- channel , 32 - bit CCD connected as an MOS capacitor ( B ) . ( The flat band capaci- tance , Cfb is 0.79 C ) . 0.1 0 5 10 15 20 × 10-4 ...
... frequency capacitance- voltage characteristics of a p - MOS capacitor ( Co 60.3 pF ) ( A ) and an n- channel , 32 - bit CCD connected as an MOS capacitor ( B ) . ( The flat band capaci- tance , Cfb is 0.79 C ) . 0.1 0 5 10 15 20 × 10-4 ...
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... frequency of 125 kHz . The input and output gates were held at +15 V when injecting or extracting charge from the channel ; other- wise they were held at zero bias . In addi- tion , the input diode was slightly forward biased with ...
... frequency of 125 kHz . The input and output gates were held at +15 V when injecting or extracting charge from the channel ; other- wise they were held at zero bias . In addi- tion , the input diode was slightly forward biased with ...
Page 27
... MHz modula- tion , it is likely that the surface break- down was ionic , rather than electronic , in nature . a b When the detected modulating frequency was changed from 385 to. 27 Wafer Inspection and Test Flying-Spot Scanner Development.
... MHz modula- tion , it is likely that the surface break- down was ionic , rather than electronic , in nature . a b When the detected modulating frequency was changed from 385 to. 27 Wafer Inspection and Test Flying-Spot Scanner Development.
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aluminum analysis angle Appendix applied automation bond pull test Bureau of Standards calibration capacitance Center conversion loss curve detector determined device under test diffusion diode dopant density edge effect electrical electron beam emitter energy epitaxial error eyepiece fabrication filar frequency germanium heating impurity industry input integrated circuits intermediate-frequency junction temperature Laboratory layer leak loop height mask Materials measured pull strength ment method microscope mixer modulation MOS capacitor National Bureau NBS Spec noise noise figure obtained operating optical output oxide p-n junction parameters percent PHOTOLITHOGRAPHY photomask plot Power Transistors PRINT probe process control Publ Radiation region Resistance Measurements resistor scanning electron microscope semiconductor devices Semiconductor Measurement Technology sheet resistance shown in figure silicon silicon dioxide specimen Subcommittee substrate surface switching Technical techniques test patterns test structures thermal resistance thickness tion two-level bond values voltage wafer wire bonds