NBS Special PublicationU.S. Department of Commerce, National Bureau of Standards, 1964 - 9 pages |
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... Dopant Density Profiles from Capacitance - Voltage Data NATIONAL BUREAU OF STANDARDS The National Bureau of Standards '
... Dopant Density Profiles from Capacitance - Voltage Data NATIONAL BUREAU OF STANDARDS The National Bureau of Standards '
Page i
Semiconductor Measurement Technology : A BASIC Program for Calculating Dopant Density Profiles from Capacitance - Voltage Data Richard L. Mattis and Martin G. Buehler Electronic Technology Division Institute for Applied Technology ...
Semiconductor Measurement Technology : A BASIC Program for Calculating Dopant Density Profiles from Capacitance - Voltage Data Richard L. Mattis and Martin G. Buehler Electronic Technology Division Institute for Applied Technology ...
Page ii
... Dopant Density Profiles from Capacitance - Voltage Data . ( Semiconductor Measurement Technology ) ( National Bureau of Standards Special Publication ; 400-11 ) Supt . of Docs . No .: C 13.10 : 400-11 1. Electronic Data Processing - lon ...
... Dopant Density Profiles from Capacitance - Voltage Data . ( Semiconductor Measurement Technology ) ( National Bureau of Standards Special Publication ; 400-11 ) Supt . of Docs . No .: C 13.10 : 400-11 1. Electronic Data Processing - lon ...
Page v
... prepared by Edgar C. Watts and Leo R. Williams . of the final draft was done by Frances C. Butler . The typing Through ARPA Order 2397 , Program Code 4D10 . --- A BASIC Program for Calculating Dopant Density Profiles from V.
... prepared by Edgar C. Watts and Leo R. Williams . of the final draft was done by Frances C. Butler . The typing Through ARPA Order 2397 , Program Code 4D10 . --- A BASIC Program for Calculating Dopant Density Profiles from V.
Page 1
... dopant density , the junction depth , the background dopant density in the diffused layer , the junction diameter , three scaling parameters , and the capacitance - voltage data pairs . Output from the program is in the form of a plot ...
... dopant density , the junction depth , the background dopant density in the diffused layer , the junction diameter , three scaling parameters , and the capacitance - voltage data pairs . Output from the program is in the form of a plot ...
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aluminum analysis angle Appendix applied automation bond pull test Bureau of Standards calibration capacitance Center conversion loss curve detector determined device under test diffusion diode dopant density edge effect electrical electron beam emitter energy epitaxial error eyepiece fabrication filar frequency germanium heating impurity industry input integrated circuits intermediate-frequency junction temperature Laboratory layer leak loop height mask Materials measured pull strength ment method microscope mixer modulation MOS capacitor National Bureau NBS Spec noise noise figure obtained operating optical output oxide p-n junction parameters percent PHOTOLITHOGRAPHY photomask plot Power Transistors PRINT probe process control Publ Radiation region Resistance Measurements resistor scanning electron microscope semiconductor devices Semiconductor Measurement Technology sheet resistance shown in figure silicon silicon dioxide specimen Subcommittee substrate surface switching Technical techniques test patterns test structures thermal resistance thickness tion two-level bond values voltage wafer wire bonds