2. Boron or Phosphorus Doping Densities of Silicon Crystals Computed from 5. Methods for Removing Encapsulating Material Percent Difference Between Electrical and Infrared Thermal Resistance Measurements Made Under High-Current, Low-Voltage Operating Conditions and Those Made Under Low-Current, High-Voltage Operating Conditions 6. Comparison of Infrared and Electrical Thermal Resistance Measurements Under High-Voltage, Low-Current Operating Conditions 7. Conversion Loss Measurements; Typical Repeatibility Measurement Run Delay Time of a 2N2219 Transistor Before and After hfe Degradation. 8. FOREWORD The Joint Program on Methods of Measurement for Semiconductor Materials, Process Control, and Devices was undertaken in 1968 to focus NBS efforts to enhance the performance, interchangeability, and reliability of discrete semiconductor devices and integrated circuits through improvements in methods of measurement for use in specifying materials and devices and in control of device fabrication processes. These improvements are intended to lead to a set of measurement methods which have been carefully evaluated for technical adequacy, which are acceptable to both users and suppliers, which can provide a common basis for the purchase specifications of government agencies, and which will lead to greater economy in government procurement. In addition, such methods will provide a basis for controlled improvements in essential device characteristics, such as uniformity of response to radiation effects. X * The Program is supported by the National Bureau of Standards, the Defense + Nuclear Agency, the Defense Advanced Research Projects Agency, the U.S. Navy Stra§ + tegic Systems Project Office, the Air Force Weapons Laboratory, the Air Force CamT # bridge Research Laboratories, and the Atomic Energy Commission. Although there is not a one-to-one correspondence between the tasks described in this report and the cost centers through which the Program is supported, the concern of certain sponsors with specific parts of the Program is reflected in planning and conduct of the work. * t Through Research and Technical Services Cost Centers 4251126, 4252128, 4254115, 4251140, and 4254140. X + Administered by U.S. Naval Ammunition Depot, Crane, Indiana through Project Order PO-3-0048. (NBS Cost Center 4259533). Through Delivery Order F29601-71-0002. 1 (NBS Cost Center 4252535).. Through Project Order Y72-873. (NBS Cost Center 4251536). Division of Biomedical and Environmental Research. (NBS Cost Center 4254425). METHODS OF MEASUREMENT FOR SEMICONDUCTOR MATERIALS, PROCESS PROCESS CONTROL, AND DEVICES QUARTERLY REPORT JANUARY 1 TO MARCH 31, 1973 This quarterly progress report, nineteenth of a series, describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include (1) development of a comprehensive, large-area test pattern for evaluating planar junction structures, (2) completion of experimental work on the evaluation of the destructive, double-bond pull test for wire bonds, (3) initiation of a scanning electron microscope facility, and (4) completion of the investigation of the mechanism of emitter-base junction reverse breakdown during rapid switching of transistors. Because of the general applicability of the last of these, details are presented in a separate appendix. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices; determination of S-parameters, delay time, and related carrier transport properties in junction devices; development of a-c probing techniques; and characterization of noise and conversion loss of microwave detector diodes. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendices. Key Words: Base transit time; carrier lifetime; delay time; die attachment; electrical properties; electronics; epitaxial silicon; four-probe method; generation centers; germanium; gold-doped silicon; infrared response; methods of measurement; microelectronics; microwave diodes; probing techniques (a−c); pull test; recombination centers; resistivity; resistivity standards; semiconductor devices; semiconductor materials; semiconductor process control; silicon; S-parameters; switching transients; thermal resistance; thermally stimulated properties; trapping centers; wire bonds. This is the nineteenth quarterly report to the sponsors of the Joint Program on Methods of Measurement for Semiconductor Materials, Process Control, and Devices. It summarizes work on a wide variety of measurement methods that are being studied at the National Bureau of Standards. The Program is a continuing one, and the results and conclusions reported here are subject to modification and refinement. INTRODUCTION The work of the Program is divided into a number of tasks, each directed toward the study of a particular material or device property or measurement technique. This report is subdivided according to these tasks. Highlights of activity during the quarter are given in section 2. Section 3 deals with tasks on methods of measurement for materials; section 4, with those on methods of measurement for process control; and section 5, with those on methods of measurement for devices. References for each section are listed in a separate subsection at the end of that section. The report of each task includes the long-term objective, a narrative description of progress made during this reporting period, and a listing of plans for the immediate future. Additional information concerning the material reported may be obtained directly from individual staff members identified with the task in the report. The organization of the Joint Program staff and telephone numbers are listed in Appendix A. An important part of the work that frequently goes beyond the task structure is participation in the activities of various technical standardizing committees. The list of personnel involved with this work given in Appendix B suggests the extent of this participation. Additional details of current standardization activities not associated with a particular task are given in section 2. Background material on the Program and individual tasks may be found in earlier reports in this series as listed in Appendix D. From time to time, publications are prepared that describe some aspect of the program in greater detail. Current publications of this type are also listed in Appendix D. Reprints or copies of such publications are usually available on request to the author. |