NBS Special Publication, Issues 400-411U.S. Government Printing Office, 1975 |
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Page 3
... surface of the diffused layer , and N is the estimated background dopant density in the diffused layer . The characteristic length of the Gaussian diffusion is represented by L , and I is the area of either of the two shaded regions in ...
... surface of the diffused layer , and N is the estimated background dopant density in the diffused layer . The characteristic length of the Gaussian diffusion is represented by L , and I is the area of either of the two shaded regions in ...
Page 8
... SURFACE DENS , the density of diffusant atoms at the surface of the diffused layer ( as measured for instance by junction depth and sheet resistivity on a pilot slice [ 15 ] ) in ( centimetres ) -3 , and ( 7 ) N3 or ESTI- MATED NB , the ...
... SURFACE DENS , the density of diffusant atoms at the surface of the diffused layer ( as measured for instance by junction depth and sheet resistivity on a pilot slice [ 15 ] ) in ( centimetres ) -3 , and ( 7 ) N3 or ESTI- MATED NB , the ...
Page 30
... SURFACE DENS ( CM ^ -3 ) = ! 1.0E + 18 BACKGROUND DENS ( CM ^ −3 ) = ! 3.0E + 16 BUILT - IN VOLTAGE = ! 0.7 C3 VI 8.78502 -.402974 7.12055 -.151537 5.92403 231969 5.02001 .79025 4.31095 1.5765 3.73864 2.6554 3.2663 4.10603 2.86967 ...
... SURFACE DENS ( CM ^ -3 ) = ! 1.0E + 18 BACKGROUND DENS ( CM ^ −3 ) = ! 3.0E + 16 BUILT - IN VOLTAGE = ! 0.7 C3 VI 8.78502 -.402974 7.12055 -.151537 5.92403 231969 5.02001 .79025 4.31095 1.5765 3.73864 2.6554 3.2663 4.10603 2.86967 ...
Page 35
... surface dopant density , the junction depth , the background dopant density in the diffused layer , the junction diameter , three scaling parameters , and the capacitance - voltage data pairs . from the program is in the form of a plot ...
... surface dopant density , the junction depth , the background dopant density in the diffused layer , the junction diameter , three scaling parameters , and the capacitance - voltage data pairs . from the program is in the form of a plot ...
Page 44
... Surface Analysis Techniques Test Patterns Test Pattern for Resistivity - Dopant Density Evaluation Charge - Coupled Device Test Pattern Epitaxial Layer Thickness Cleave and Stain Measurements • Metal - Photoresist - Semiconductor ...
... Surface Analysis Techniques Test Patterns Test Pattern for Resistivity - Dopant Density Evaluation Charge - Coupled Device Test Pattern Epitaxial Layer Thickness Cleave and Stain Measurements • Metal - Photoresist - Semiconductor ...
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Common terms and phrases
aluminum analysis angle applied beam energy bond pairs bond pull test boron Bureau of Standards calibration capacitance Center collector curve Darlington pairs depletion detector determined diffusion diode dopant density edge electrical electron beam emitter epitaxial eyepiece frequency function germanium heating image intensity profile impurity input integrated circuits intermediate-frequency ionization junction temperature Laboratory leak loop height materials measured pull strength method microscope mixer modulation MOS capacitor n-type National Bureau NBS Spec noise noise figure obtained operating output oxide p-n junction parameters percent PHOTOLITHOGRAPHY photomask plotted power transistors probe Publ ratio region resistance measurements resistor scanning electron scanning electron microscope Semiconductor Measurement Technology sheet resistance shown in figure silicon dioxide specimen spreading resistance substrate surface switching technical technique test patterns test structures thermal resistance thickness tion two-level bond values voltage wafer width wire bonds
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