NBS Special Publication, Issues 400-411U.S. Government Printing Office, 1975 |
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Page 2
... specimen , Eo is the permittivity of free space , A , is the area of the diode , C is the measured capac- itance and V is the applied voltage . In program CV1 , the peripheral capacitance is first substracted from the measured ...
... specimen , Eo is the permittivity of free space , A , is the area of the diode , C is the measured capac- itance and V is the applied voltage . In program CV1 , the peripheral capacitance is first substracted from the measured ...
Page 1
... specimens [ 1-4 ] . The basic equations for calculating dopant density N ( W ) as a function of depletion width W were derived by Schottky [ 5 ] and are suit- able for the case of a large area one - sided abrupt junction diode under ...
... specimens [ 1-4 ] . The basic equations for calculating dopant density N ( W ) as a function of depletion width W were derived by Schottky [ 5 ] and are suit- able for the case of a large area one - sided abrupt junction diode under ...
Page 2
... specimen , Eo is the permittivity of free space , A , is the area of the diode , C is the measured capac- itance and V is the applied voltage . In program CV1 , the peripheral " capacitance is first substracted from the measured ...
... specimen , Eo is the permittivity of free space , A , is the area of the diode , C is the measured capac- itance and V is the applied voltage . In program CV1 , the peripheral " capacitance is first substracted from the measured ...
Page 11
B Table 1 - Symbols Used in PLOT Subroutine distance from junction into the specimen , μm G1 minimum value of dopant density to be plotted , cm 3 G2 G3 ΧΟ X1 X2 Y1 Y2 scale factor for N ( B ) ; number of carriage spaces to represent one ...
B Table 1 - Symbols Used in PLOT Subroutine distance from junction into the specimen , μm G1 minimum value of dopant density to be plotted , cm 3 G2 G3 ΧΟ X1 X2 Y1 Y2 scale factor for N ( B ) ; number of carriage spaces to represent one ...
Page 15
... specimen were uniform at å level N , and ( 3 ) various assumptions such as zero diffu- sion capacitance and abrupt space charge řegion boundaries were valid . j . A sample calculation using program CV1 is given in Appendix C. 4 ...
... specimen were uniform at å level N , and ( 3 ) various assumptions such as zero diffu- sion capacitance and abrupt space charge řegion boundaries were valid . j . A sample calculation using program CV1 is given in Appendix C. 4 ...
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aluminum analysis angle applied beam energy bond pairs bond pull test boron Bureau of Standards calibration capacitance Center collector curve Darlington pairs depletion detector determined diffusion diode dopant density edge electrical electron beam emitter epitaxial eyepiece frequency function germanium heating image intensity profile impurity input integrated circuits intermediate-frequency ionization junction temperature Laboratory leak loop height materials measured pull strength method microscope mixer modulation MOS capacitor n-type National Bureau NBS Spec noise noise figure obtained operating output oxide p-n junction parameters percent PHOTOLITHOGRAPHY photomask plotted power transistors probe Publ ratio region resistance measurements resistor scanning electron scanning electron microscope Semiconductor Measurement Technology sheet resistance shown in figure silicon dioxide specimen spreading resistance substrate surface switching technical technique test patterns test structures thermal resistance thickness tion two-level bond values voltage wafer width wire bonds
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