NBS Special Publication, Issues 400-411U.S. Government Printing Office, 1975 |
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Page 15
... obtained , it is used in eq ( 10 ) to cal- culate the desired integral ( line 550 to 560 ) . Having thus calculated the integral in eq . ( 10 ) , the same equation is effectively rearranged in lines 3135 and 3145 so that the expression ...
... obtained , it is used in eq ( 10 ) to cal- culate the desired integral ( line 550 to 560 ) . Having thus calculated the integral in eq . ( 10 ) , the same equation is effectively rearranged in lines 3135 and 3145 so that the expression ...
Page 12
... obtained from this specimen of initially phosphorus - doped sili- con is in excellent agreement with an aver- age activation energy of 0.3617 ± 0.0011 eV measured previously on four initially boron- doped specimens diffused with gold ...
... obtained from this specimen of initially phosphorus - doped sili- con is in excellent agreement with an aver- age activation energy of 0.3617 ± 0.0011 eV measured previously on four initially boron- doped specimens diffused with gold ...
Page 14
... obtained as they are considered to be most representative of the bulk values . In each case , it is evident that the experimental results fit the shape of the curve calculated with the acceptor level 0.535 eV below the conduction band ...
... obtained as they are considered to be most representative of the bulk values . In each case , it is evident that the experimental results fit the shape of the curve calculated with the acceptor level 0.535 eV below the conduction band ...
Page 19
... obtaining values , difficulties can be encountered with the MOS capacitor ( 8 ) in that it measures at the surface of the silicon where the dop- ant density may be altered by the oxidation process . Values obtained from the Hall ef ...
... obtaining values , difficulties can be encountered with the MOS capacitor ( 8 ) in that it measures at the surface of the silicon where the dop- ant density may be altered by the oxidation process . Values obtained from the Hall ef ...
Page 20
... obtained from base profiles by combining results of two test structures . The bas dopant density profile can be obtained the emitter - base diode ( 9 ) , and the base Number Test Structurea TEST PATTERNS Table 3 Planar Test Structures. 20.
... obtained from base profiles by combining results of two test structures . The bas dopant density profile can be obtained the emitter - base diode ( 9 ) , and the base Number Test Structurea TEST PATTERNS Table 3 Planar Test Structures. 20.
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Common terms and phrases
aluminum analysis angle applied beam energy bond pairs bond pull test boron Bureau of Standards calibration capacitance Center collector curve Darlington pairs depletion detector determined diffusion diode dopant density edge electrical electron beam emitter epitaxial eyepiece frequency function germanium heating image intensity profile impurity input integrated circuits intermediate-frequency ionization junction temperature Laboratory leak loop height materials measured pull strength method microscope mixer modulation MOS capacitor n-type National Bureau NBS Spec noise noise figure obtained operating output oxide p-n junction parameters percent PHOTOLITHOGRAPHY photomask plotted power transistors probe Publ ratio region resistance measurements resistor scanning electron scanning electron microscope Semiconductor Measurement Technology sheet resistance shown in figure silicon dioxide specimen spreading resistance substrate surface switching technical technique test patterns test structures thermal resistance thickness tion two-level bond values voltage wafer width wire bonds
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