A review of the early work leading to this Program is given in Bullis, W. M., Measurement Methods for the Semiconductor Device Industry A Review of NBS Activity, NES Tech. Note 511 (December 1969).

Progress reports covering the period July 1, 1968, through June 30, 1973, were published as NBS Technical Notes with the title, Methods of Measurement for Semiconductor Materials, Process Control, and Devices:

After July 1, 1973, progress reports were issued in the NBS Special Publication 400 subseries with the title, Semiconductor Measurement Technology:

As various phases of the work are completed, publications are prepared to summarize the results or to describe the work in greater detail. Publications of this kind which have been issued recently are listed below:

Ciarlo, D. R., Schultz, P. A., and Novotny, D. B., Automated Inspection of IC Photomasks, Proc. Soc. Photo-Optical Instrumentation Engineers, Vol. 55, Technological Advances in Micro and Sub-Micro Photofabrication Imagery, Society of Photo-Optical Instrumentation Engineers, San Diego, California, August 21-23, 1974, pp. 84-89.

Marsden, C. P., Tabulation of Published Data on Electron Devices in the U.S.S.R. Through December 1973, NBS Technical Note 835 (November 1974). (Supersedes NBS Technical Note 715.)

APPENDIX B

Ehrstein, J. R., Ed., Semiconductor Measurement Technology: ium, NBS Spec. Publ. 400-10 (December 1974).

Spreading Resistance Sympos

Schafft, H. A., Semiconductor Measurement Technology: ARPA/NBS Workshop II. Hermeticity Testing for Integrated Circuits, NBS Spec. Publ. 400-9 (December 1974).

Ehrstein, J. R., Improved Surface Preparation for Spreading Resistance Measurements on p-Type Silicon, Semiconductor Measurement Technology: Spreading Resistance Symposium, J. R. Ehrstein, Ed., NBS Spec. Publ. 400-10 (December 1974), pp. 249-255.

Rogers, G. J., Sawyer, D. E., and Jesch, R. L., Semiconductor Measurement Technology: Measurement of Transistor Scattering Parameters, NBS Spec. Publ. 400-5 (January 1975).

Sher, A. H., Semiconductor Measurement Technology:

Improved Infrared Response Technique

for Detecting Defects and Impurities in Germanium and Silicon p-i-n Diodes, NBS Spec. Publ. 400-13 (February 1975).

Lewis, D. C., On the Determination of the Minority Carrier Lifetime from the Reverse Recovery Transient of pnR Diodes, Solid-State Electronics 18, 87-91 (January 1975).

Blackburn, D. L., An Electrical Technique for the Measurement of the Peak Junction Temperature of Power Transistors, Thirteenth Annual Proceedings, Reliability Physics 1975, Las Vegas, Nevada, April 1-3, 1975, to appear.

Blackburn, D. L., and Oettinger, F. F., Transient Thermal Response of Measurements of
Power Transistors, IEEE Trans. Industrial Electronics and Control Instrumentation
IECI-22, 134-141 (May 1975).

Galloway, K. F., Keery, W. J., and Leedy, K. O., Integrated Circuit Damage Resulting from SEM Examination, Proc. 25th Annual Electronic Components Conference, Washington, D. C., May 12-14, 1975, pp. 263-266.

Buehler, M. G., Planar Test Structures for Characterizing Impurities in Silicon, Extended Abstracts of the Meeting of the Electrochemical Society, Toronto, Ontario, May 11-16, 1975, pp. 403-404.

Rubin, S., Thermal Resistance Measurements on Monolithic and Hybrid Darlington Power Transistors, Proceedings 1975 IEEE Power Electronics Specialists Conference (PESC), Culver City, California, June 9-11, 1975, to appear.

Kraft, R., Finite Difference Techniques for Diffusion and Redistribution Problems with Segregation-type Boundary Conditions, Proceedings of the AICA International Symposium on Computer Methods for Partial Differential, Equations, Lehigh University, Bethlehem, Pa., June 17-19, 1975, pp. 328-334.

In most cases reprints of articles in technical journals may be obtained on request to the author. NBS Technical Notes and Special Publications are available from the Superintendent of Documents, U.S. Government Printing Office, Washington, D. C. 20402, or the National Technical Information Service, Springfield, Virginia 22161, or both. Current information regarding availability of all publications issued by the Program is provided in the latest edition of NBS List of Publications No. 72 which can be obtained on request to Mrs. K. O. Leedy, Room B346, Technology Building, National Bureau of Standards, Washington, D. C. 20234.

B.4.

Videotapes

Color videotape cassette presentation on improvements in semiconductor measurement

APPENDIX B

technology are being prepared for the purpose of more effectively disseminating the results of the work to the semiconductor industry. These videotapes are available for distribution on loan without charge on request to H. A. Schafft, Room A317, Technology Building, National Bureau of Standards, Washington, D. C. 20234. Copies of these videotapes may be made and retained by requestors. The first videotape, Defects in PN Junctions and MOS Capacitors Observed Using Thermally Stimulated Current and Capacitance Measurements, by M. G. Buehler has been completed and released for distribution. As an added feature, arrangements can be made for the author to be available for a telephone conference call to answer questions and provide more detailed information, following a prearranged showing of the videotape.