APPENDIX B SEMICONDUCTOR TECHNOLOGY PROGRAM PUBLICATIONS B.1. Prior Reports A review of the early work leading to this Program is given in Bullis, W. M., Measurement Methods for the Semiconductor Device Industry - A Review of NBS Activity, NBS Tech. Note 511, December, 1969. Quarterly reports covering the period July 1, 1968, through June 30, 1973, were published as NBS Technical Notes with the title, Methods of Measurement for Semiconductor Materials, Process Control, and Devices: After July 1, 1973 quarterly reports were issued in the NBS Special Publication 400 subseries with the title, Semiconductor Measurement Technology: AD 757244 AD 762840 AD 766918 AD 771018 As various phases of the work are completed, publications are prepared to summarize the results or to describe the work in greater detail. Publications of this kind which have been issued recently are listed below: Buehler, M. G., Semiconductor Measurement Technology: Microelectronic Test Patterns: An Overview, NBS Spec. Publ. 400-6 (August 1974). Bullis, W. M., Standard Measurements of the Resistivity of Silicon by the Four-Probe Method, NBSIR 74-496 (August 1974). (Supersedes NBS Report 9666, NTIS Accession No. N68-18067.) APPENDIX B Ciarlo, D. R., Schultz, P. A., and Novotny, D. B., Automated Inspection of IC Photomasks, Sher, A. H., Semiconductor Nuclear Radiation Detector Studies - Marsden, C. P., Tabulation of Published Data on Electron Devices in the U.S.S.R. Through December 1973, NBS Technical Note 835 (November 1974). (Supersedes NBS Technical Note 715.) Ehrstein, J. R., Ed., Semiconductor Measurement Technology: Spreading Resistance Symposium, NBS Spec. Publ. 400-10 (December 1974). Schafft, H. A., Semiconductor Measurement Technology: ARPA/NBS Workshop II. Hermeticity Testing for Integrated Circuits, NBS Spec. Publ. 400-9 (December 1974). Ehrstein, J. R., Improved Surface Preparation for Spreading Resistance Measurements on p-Type Silicon, Semiconductor Measurement Technology: Spreading Resistance Symposium, J. R. Ehrstein, Ed., NBS Spec. Publ. 400-10 (December 1974), pp. 249-255. Rogers, G. J., Sawyer, D. E., and Jesch, R. L., Semiconductor Measurement Technology: Sher, A. H., Semiconductor Measurement Technology: Improved Infrared Response Technique for Detecting Defects and Impurities in Germanium and Silicon p-i-n Diodes, NBS Spec. Publ. 400-13 (February 1975). Lewis, D. C., On the Determination of the Minority Carrier Lifetime from the Reverse Recovery Transient of pnR Diodes, Solid-State Electronics 18, 87-91 (1975). B.3. Availability of Publications In most cases reprints of articles in technical journals may be obtained on request to the author. NBS Technical Notes and Special Publications are available from the Superintendent of Documents, U.S. Government Printing Office, Washington, D. C. 20402, or the National Technical Information Service, Springfield, Virginia 22161, or both. Current information regarding availability of all publications issued by the Program is provided in the latest edition of NBS List of Publications No. 72 which can be obtained on request to Mrs. K. 0. Leedy, Room B346, Technology Building, National Bureau of Standards, Washington, D. C. 20234. B.4. Videotapes Color videotape cassette presentation on improvements in semiconductor measurement technology are being prepared for the purpose of more effectively disseminating the results of the work to the semiconductor industry. These videotapes are available for distribution on loan without charge on request to H. A. Schafft, Room A317, Technology Building, National Bureau of Standards, Washington, D. C. 20234. Copies of these videotapes may be made and retained by requestors. The first videotape, titled "Defects in PN Junctions and MOS Capacitors Observed Using Thermally Stimulated Current and Capacitance Measurements," by M. G. Buehler has been completed and released for distribution. As an added feature, arrangements can be made for the author to be available for a telephone conference call to answer questions and provide more detailed information, following a prearranged showing of the videotape. APPENDIX C WORKSHOP AND SYMPOSIUM SCHEDULE . Proceedings or Reports of Past Events: Symposium on Silicon Device Processing, Gaithersburg, Maryland, June 2-3, 1970. (Cosponsored by ASTM Committee F-1 and NBS). Proceedings: NBS Spec. Publ. 337 (November 1970). ARPA/NBS Workshop I. Measurement Problems in Integrated Circuit Processing and Assembly, Palo Alto, California, September 7, 1973. Report: NBS Spec. Publ. 400-3 ARPA/NBS Workshop II. Hermeticity Testing for Integrated Circuits, Gaithersburg, Spreading Resistance Symposium, Gaithersburg, Maryland, June 13-14, 1974. (Cosponsored by ASTM Committee F-1 and NBS). Proceedings: NBS Spec. Publ. 400-10 (December 1974). ARPA/NBS Workshop III. Test Patterns, Scottsdale, Arizona, September 6, 1974. Report: NBS Spec. Publ. 400-15 (to appear). !. Calendar of Future Events: ARPA/NBS Workshop IV. Surface Analysis for Silicon Devices, Gaithersburg, Maryland, APPENDIX D STANDARDS COMMITTEE COMMITTEE ACTIVITIES ASTM Committee F-1 on Electronics J. H. Albers, Secretary, Packaging Subcommittee; Hybrid Microelectronics Subcommittee M. G. Buehler, Chairman, Task Force on Test Patterns, Process Controls Section; Semiconductor Crystals and Semiconductor Measurements Subcommittees W. M. Bullis, Secretary; Editor, Semiconductor Crystals Subcommittee C. A. Cannon, Arrangements Committee J. R. Ehrstein, Chairman, Resistivity Section; Semiconductor Crystals and Semiconductor Measurements Subcommittees J. C. French, Chairman, Editorial Subcommittee; Secretary, Advisory Committee; Awards Committee G. G. Harman, Secretary, Interconnection Bonding Section; Hybrid Microelectronics Subcommittee B. S. Hope, Assistant Secretary K. O. Leedy, Chairman, Packaging Subcommittee; Chairman, Interconnection Bonding Section; Hybrid Microelectronics and Quality and Hardness Assurance Subcommittees D. C. Lewis, Semiconductor Measurements and Quality and Hardness Assurance Subcommittees C. P. Marsden, Honorary Chairman; Chairman, Arrangements Committee R. L. Mattis, Editor, Semiconductor Measurements Subcommittee; Semiconductor Crystals Subcommittee J. F. Mayo-Wells, Editorial Subcommittee D. B. Novotny, Editor, Semiconductor Processing Materials Subcommittee W. E. Phillips, Chairman, Lifetime Section; Secretary, Semiconductor Crystals Subcommittee; Semiconductor Processing Materials, Semiconductor Measurements, and Hybrid Microelectronics Subcommittees G. J. Rogers, Quality and Hardness Assurance Subcommittee S. Ruthberg, Chairman, Hermeticity Section; Semiconductor Processing Materials, Hybrid Microelectronics, and Quality and Hardness Assurance Subcommittees H. A. Schafft, Chairman, Publicity Committee A. H. Sher, Semiconductor Crystals, Semiconductor Processing Materials, and Hybrid Microelectronics Subcommittees W. R. Thurber, Semiconductor Crystals and Semiconductor Measurements Subcommittees ASTM Committee E-10 on Radioisotopes and Radiation Effects W. M. Bullis, Subcommittee 7, Radiation Effects on Electronic Materials J. C. French, Subcommittee 7, Radiation Effects on Electronic Materials D. C. Lewis, Subcommittee 7, Radiation Effects on Electronic Materials Electronic Industries Association: Solid State Products Division, Joint Electron Device Engineering Council (JEDEC) F. F. Oettinger, Chairman, Task Group JC-11.3-1 on Thermal Considerations for Microelectronic Devices, Committee JC-11.3 on Mechanical Standardization for Microelectronic Devices; Chairman, Task Group JC-25-5 on Thermal Characterization of Power Transistors, Committee JC-25 on Power Transistors; Technical Advisor, |