LIST OF FIGURES 1. 2. ༡. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. Cross sectional view of holder designed for the determination of dopant density profiles by the incremental sheet resistance method. Electron density on gold acceptors in the space-charge region of a silicon pn junction Schematic representation of the distribution of charge throughout the Calculated reduced thermally stimulated current, I (p+n)/qAW N, from gold Calculated reduced thermally stimulated current, I2 (pn)/qAW N., from gold = Emission temperature of the phase I current response of gold acceptor defects in n-type silicon as a function of heating rate for various conditions Hall effect activation energy plot for the gold donor in initially n-type X-ray photoelectron spectra of carbon, silicon, and oxygen from an Relative areas of x-ray photoelectron spectral peaks as a function of Ratios of the relative areas of the x-ray photoelectron peaks due to Relative areas of x-ray photoelectron spectral peaks of cleaned silicon Test pattern, NBS-3, for characterizing the resistivity-dopant density A topographic view and cross section of an n-channel, three-phase, 16. High-frequency capacitance-voltage characteristics of a p-MOS capacitor Pulse height of a "one" preceded by 9 zeros as a function of the number of transfers around a 32-bit circular CCD operating at 125 kHz Fractional charge loss per transfer from a "one" preceded by N zeros and transferred 336 times around a 32-bit circular CCD operating at 125 kHz Fractional charge loss from a "one" preceded by N zeros as a function of the number of transfers around a 32-bit circular CCD operating at 125 kHz 20. Electron beam induced current response and unmodulated 0.633-um laser beam induced current response of a 0.76-mm square, unbiased, silicon p-n junction diode 19. LIST OF FIGURES PAGE Measured and calculated normalized vibration amplitudes of ultrasonic bonding tools mounted in inverted positions Beam-lead force indicator as supplied with the beam-lead bonder Modified beam-lead force gauge assembly . . Block diagram of acoustic emission test system Indicated leak rate for sealed-off borosilicate glass capsules of same Commercially available Darlington circuits Circuit diagram of emitter-only switching circuit for measuring thermal resistance modified to allow use of a variety of junction voltages as temperature sensitive parameters Model used for simulating the way in which the emitter-base voltage averages the junction temperature Temperature and relative measurement current density along a diagonal of 31 32 LIST OF TABLES Properties of Gold-Doped Silicon Specimens. . Specimens for the Comparative Study of Surface Analysis Techniques PREFACE The Semiconductor Technology Program serves to focus NBS efforts to enhance the performance, interchangeability, and reliability of discrete semiconductor devices and integrated circuits through improvements in measurement technology for use in specifying materials and devices in national and international commerce and for use by industry in controlling device fabrication processes. Its major thrusts are the development of carefully evaluated and well documented test procedures and associated technology and the dissemination of such information to the electronics community. Application of the output by industry will contribute to higher yields, lower cost, and higher reliability of semiconductor devices. The output provides a common basis for the purchase specifications of government agencies which will lead to greater economy in government procurement. In addition, improved measurement technology will provide a basis for controlled improvements in fabrication processes and in essential device characteristics. ards (ARPA/IC/NBS), addresses critical Defense Department problems in the yield, reliability, and availability of integrated circuits. The DNA-supported portion of the Program emphasizes aspects of the work which relate to radiation response of electron devices for use in military systems. There is considerable overlap between the interests of DNA and ARPA. Measurement oriented activity appropriate to the mission of NBS is a critical element in the achievement of the objectives of both other agencies. Essential assistance to the Program is also received from the semiconductor industry through cooperative experiments and technical exchanges. NBS interacts with industrial users and suppliers of semiconductor devices through participation in standardizing organizations; through direct consultations with device and material suppliers, government agencies, and other users; and through periodically scheduled symposia and workshops. In addition, progress reports, such as this one, are regularly prepared for issuance in the NBS Special Publication 400 sub-series. More detailed reports such as state-of-the-art reviews, literature compilations, and summaries of technical efforts conducted within the Program are issued as these activities are completed. Reports of this type which are published by NBS also appear in the Special Publication 400 subseries. Announcements of availability of all publications in this sub-series are sent by the Government Printing Office to those who have requested this service. A request form for this purpose may be found at the end of this report. SEMICONDUCTOR MEASUREMENT TECHNOLOGY QUARTERLY REPORT July 1 to September 30, 1974 Abstract: This quarterly progress report describes NBS Key Words: Acoustic emission; beam-lead bonds; boron redistribution; Darlington pairs; dopant profiles; electrical properties; electronics; epitaxial layer thickness; flyingspot scanner; gold-doped silicon; hermeticity; incremental sheet resistance; measurement methods; microelectronics; micrometrology; MOS devices; oxide films; resistivity; scanning low energy electron probe; semiconductor devices; semiconductor materials; semiconductor process control; silicon; test patterns; thermal resistance; thermal response; thermally stimulated current; ultrasonic bonding; wire bonds; x-ray photoelectron spectroscopy. 1. INTRODUCTION This is a report to the sponsors of the Semiconductor Technology Program on work during the twenty-fifth quarter of the Program. It summarizes work on a wide variety of measurement methods for semiconductor materials, process control, and devices that are being studied at the National Bureau of INTRODUCTION The work of the Program is divided into a number of tasks, each directed toward the study of a particular material or device property or measurement technique. This report is subdivided according to these tasks. Highlights of activity during the quarter are given in section 2. Subsequent sections deal with each specific task area. References cited are listed in the final section of the report. The report of each task includes a narrative description of progress made during this reporting period. Additional information concerning the material reported may be obtained directly from individual staff members identified with the task in the report. The organization of the Program staff and telephone numbers are listed in Appendix A. Background material on the Program and individual tasks may be found in earlier quarterly reports as listed in Appendix B. From time to time, publications are prepared that describe some aspect of the program in greater detail. Current publications of this type are also listed in Appendix B. Reprints or copies of such publications are usually available on request to the author. Communication with the electronics community is a critical aspect both as input for g ance in planning future program activities and in disseminating the results of the w to potential users. Formal channels for such communication occur in the form of workshops and symposia sponsored or cosponsored by NBS. Currently scheduled ser nars and workshops are listed in Appendix In addition, the availability of proceedi from past workshops and seminars is indicated in the appendix. An important part of the work that frequent ly goes beyond the task structure is parti ipation in the activities of various tech cal standardizing committees. The list c personnel involved with this work given i Appendix D suggests the extent of this pa ticipation. In most cases, details of standardization efforts are reported in cm! nection with the work of a particular tasi Technical services in areas of competence are provided to other NBS activities and other government agencies as they are requested. Usually these are short-term, specialized services that cannot be obtaine through normal commercial channels. To dicate the kinds of technology available the Program, such services provided duriti the period covered by this report are list in Appendix E. |