Library of Congress Cataloging in Publication Data Mattis, Richard L. A BASIC Program for Calculating Dopant Density Profiles (Semiconductor Measurement Technology) (National Bureau Supt. of Docs. No.: C 13.10:400-11 1. Electronic Data Processing-Ion Implantation. 2. Electronic National Bureau of Standards Special Publication 400-11 U.S. GOVERNMENT PRINTING OFFICE For sale by the Superintendent of Documents, U.S. Government Printing Office, Washington, D.C. 20402 LIST OF FIGURES Figure 1. Schematic representation of the depletion region of a p-n junction diode diffused in an epitaxial semiconductor . Page Figure 2. Semilog plot of the function x = erfc (y) showing the transformed variable Figure 3. Calculation of y = erfc-1(x) by means of a parabolic fit 7 Figure 4. Flow chart of the PLOT subroutine 10 Figure 5. A plot artificially constructed to show the six types of printed output of 12 Figure 6. Summary flow chart of program CV1 133 PREFACE This work was carried out as a part of the Semiconductor Technology Program in the Electronic Technology Division at the National Bureau of Standards. The Semiconductor Technology Program serves to focus NBS efforts to enhance the performance, interchangeability, and reliability of discrete semiconductor devices and integrated circuits through improvements in measurement technology for use in specifying materials and devices in national and international commerce and for use by industry in controlling device fabrication processes. The Program receives direct financial support principally from three major sponsors: The Defense Advanced Research Projects Agency (ARPA), The Defense Nuclear Agency (DNA) and the National Bureau of Standards. The specific work reported herein was supported by ARPA.* The computer program CV1, the subject of this report, is derived from a program reported by D. B. DeVries, G. Lee, and S. Watelski in Integrated-Circuit Process Control and Development, Technical Report AFAL-TR-73-268, August 1973. The present program contains improvements in the peripheral capacitance correction, the error function calculations, the numerical integration, the plot routine, and data input/output. The present report is intended as a guide for persons using the program described herein. detailed comparison of the present and the original programs. It is not intended to provide a The authors are indebted to several persons who assisted in the editing and preparation of this report. Gerard N. Stenbakken performed a critical and constructive reading of the text. The several figures were prepared by Edgar C. Watts and Leo R. Williams. of the final draft was done by Frances C. Butler. The typing Through ARPA Order 2397, Program Code 4D10. |