NBS Special Publication, Issues 400-431U.S. Government Printing Office, 1977 |
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Page ix
... side walls caused by normal isotropic etching Optical photomicrographs of microcrack in a continuous 1.2 - um - thick silicon dioxide film over aluminum - metallized linear bipolar IC wafer . Large light area is a metallized capacitor ...
... side walls caused by normal isotropic etching Optical photomicrographs of microcrack in a continuous 1.2 - um - thick silicon dioxide film over aluminum - metallized linear bipolar IC wafer . Large light area is a metallized capacitor ...
Page 24
... side walls caused by normal isotropic etching . 23,500X Thickness of glass coating : 1.8 μm ( top layer ) SEM magnification : Thickness of aluminum : Thickness of thermal oxide : 0.4 μm 1.2 um ( center layer with cavity ) 0.7 um ...
... side walls caused by normal isotropic etching . 23,500X Thickness of glass coating : 1.8 μm ( top layer ) SEM magnification : Thickness of aluminum : Thickness of thermal oxide : 0.4 μm 1.2 um ( center layer with cavity ) 0.7 um ...
Page 43
... side . 4.3.4 Selection of Best Materials Preliminary tests were made to select the best candidate materials from the wide variety of powders , liquid vehicles , and charging agents available . The criteria in these initial screening ...
... side . 4.3.4 Selection of Best Materials Preliminary tests were made to select the best candidate materials from the wide variety of powders , liquid vehicles , and charging agents available . The criteria in these initial screening ...
Page 69
... side of a metal foil , an applied voltage of 100 V for 4 min resulted in a deposition of 3.2 x 10-4 g carbon black per cm2 Tests such as these are convenient for monitoring the electrical properties of the suspension and ensuring ...
... side of a metal foil , an applied voltage of 100 V for 4 min resulted in a deposition of 3.2 x 10-4 g carbon black per cm2 Tests such as these are convenient for monitoring the electrical properties of the suspension and ensuring ...
Page 74
... surfaces , such as beaker sides or bottom , should be avoided . We have found that careless use of the ultrasonic bath has actually caused pinholes in previously good passivating layers . ( a ) ( b ) Figure 43 . Carbon 74.
... surfaces , such as beaker sides or bottom , should be avoided . We have found that careless use of the ultrasonic bath has actually caused pinholes in previously good passivating layers . ( a ) ( b ) Figure 43 . Carbon 74.
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Common terms and phrases
Acrylic aluminum etching aluminum-metallized applications Base Sheet Resistor BEC Model bias voltage Bias-Isolation Unit brightfield Bureau of Standards C-meter capacitance capacitor Capacitor over Collector carbon black circuit cm³ computed corona charging cracks defect detection demarcation etching demarcation-etched deposition dielectric screening length diode dopant density e-e scattering effect electron mobility EMITTER etch time factor etchant film Greek Cross impurity scattering mobility integrated circuits ionized impurity scattering liquid Lubrizol mask for quadrant materials metal microcracks microscope MOS Capacitor n-type silicon National Bureau neutral impurity scattering Number Oxide surface voltage p-n junctions partial pinholes passivation layer phonon phosphor phosphorus-doped silicon photomicrographs Photoresist Program quadrant are listed Resistor Greek Cross reverse decoration S(Cs sample Semiconductor Semiconductor Measurement Technology sensitivity Sheet Resistor Greek shown in figure silicon dioxide silicon nitride suspension technical techniques test pattern NBS-4 theoretical thermal thickness total donor density wafer
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