NBS Special Publication, Issues 400-431U.S. Government Printing Office, 1977 |
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Page 19
... show that the defect detection sensitivity is the same for all compositions . One may therefore continue to use our " standard composition " defined in table 1 . 4.1.5.2 Optimum Etching Temperature - Using the standard et chant ...
... show that the defect detection sensitivity is the same for all compositions . One may therefore continue to use our " standard composition " defined in table 1 . 4.1.5.2 Optimum Etching Temperature - Using the standard et chant ...
Page 28
... show clearly that the glass over the large aluminum areas , but not over the line interconnects , had cracked along the edges . The series of photomicrographs presented in figures 16 ( a ) to ( d ) shows the growth of demarcation areas ...
... show clearly that the glass over the large aluminum areas , but not over the line interconnects , had cracked along the edges . The series of photomicrographs presented in figures 16 ( a ) to ( d ) shows the growth of demarcation areas ...
Page 35
... shows the increase in pinhole density as a function of layer depth in 20 % steps , and indicates a drastic increase of pinhole density after 60 % of the dielectric layer has been removed . A detailed interpretation of the results from ...
... shows the increase in pinhole density as a function of layer depth in 20 % steps , and indicates a drastic increase of pinhole density after 60 % of the dielectric layer has been removed . A detailed interpretation of the results from ...
Page 47
... shows the result of addition of petroleum barium sulfonate to a decorating suspension of lead aluminosilicate glass in C2C13F3 . In this experiment the weight of glass deposited at 1000 V in 1 min on silicon dioxide- coated wafers was ...
... shows the result of addition of petroleum barium sulfonate to a decorating suspension of lead aluminosilicate glass in C2C13F3 . In this experiment the weight of glass deposited at 1000 V in 1 min on silicon dioxide- coated wafers was ...
Page 58
... shows an example of a pinhole not detected by the phosphor that was found by aluminum etching . In general , the correlation between phosphor decoration and etching is very good . ++ ++ Figure 33 . Direct decoration of defects after 58.
... shows an example of a pinhole not detected by the phosphor that was found by aluminum etching . In general , the correlation between phosphor decoration and etching is very good . ++ ++ Figure 33 . Direct decoration of defects after 58.
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Common terms and phrases
Acrylic aluminum etching aluminum-metallized applications Base Sheet Resistor BEC Model bias voltage Bias-Isolation Unit brightfield Bureau of Standards C-meter capacitance capacitor Capacitor over Collector carbon black circuit cm³ computed corona charging cracks defect detection demarcation etching demarcation-etched deposition dielectric screening length diode dopant density e-e scattering effect electron mobility EMITTER etch time factor etchant film Greek Cross impurity scattering mobility integrated circuits ionized impurity scattering liquid Lubrizol mask for quadrant materials metal microcracks microscope MOS Capacitor n-type silicon National Bureau neutral impurity scattering Number Oxide surface voltage p-n junctions partial pinholes passivation layer phonon phosphor phosphorus-doped silicon photomicrographs Photoresist Program quadrant are listed Resistor Greek Cross reverse decoration S(Cs sample Semiconductor Semiconductor Measurement Technology sensitivity Sheet Resistor Greek shown in figure silicon dioxide silicon nitride suspension technical techniques test pattern NBS-4 theoretical thermal thickness total donor density wafer
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