NBS Special Publication, Issues 400-431U.S. Government Printing Office, 1977 |
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Page v
... Decoration by Electrostatic Charging • 51 4.4.1 Corona - Charging Process 51 4.4.2 Direct Decoration of Defects by Corona Charging . . . 58 4.4.3 Reverse Decoration of Defects by Corona Charging . 63 4.4.4 Sample Cleaning After ...
... Decoration by Electrostatic Charging • 51 4.4.1 Corona - Charging Process 51 4.4.2 Direct Decoration of Defects by Corona Charging . . . 58 4.4.3 Reverse Decoration of Defects by Corona Charging . 63 4.4.4 Sample Cleaning After ...
Page vi
... Decoration 6.4 Direct Decoration by Corona Charging 6.5 Reverse Decoration by Corona Charging · · STANDARD PROCEDURES • • Page 76 76 76 77 78 78 78 80 80 80 80 81 81 82 84 84 84 84 90 90 • 94 7.1.1 7.1.2 7.1.3 7.1 Metal Demarcation ...
... Decoration 6.4 Direct Decoration by Corona Charging 6.5 Reverse Decoration by Corona Charging · · STANDARD PROCEDURES • • Page 76 76 76 77 78 78 78 80 80 80 80 81 81 82 84 84 84 84 90 90 • 94 7.1.1 7.1.2 7.1.3 7.1 Metal Demarcation ...
Page vii
... Decoration · 9.3 Critical Examination of Commercial ICs 9.4 Applicability to Inorganic and Organic Dielectric Film Evaluation in Various Technological Fields . REFERENCES · • Page 98 101 101 101 102 102 • 103 LIST OF ILLUSTRATIONS ...
... Decoration · 9.3 Critical Examination of Commercial ICs 9.4 Applicability to Inorganic and Organic Dielectric Film Evaluation in Various Technological Fields . REFERENCES · • Page 98 101 101 101 102 102 • 103 LIST OF ILLUSTRATIONS ...
Page x
... decoration apparatus Photoresist mask showing negative / positive precision pat- tern used in defect decoration resolution measurements . Thinnest line is 1 μm ( 121X ) 21. Micrograph of glass particles deposited on mesa - type wafer ...
... decoration apparatus Photoresist mask showing negative / positive precision pat- tern used in defect decoration resolution measurements . Thinnest line is 1 μm ( 121X ) 21. Micrograph of glass particles deposited on mesa - type wafer ...
Page xi
... decoration of defects after corona charging of insulator regions with ions of same sign as decorating particles in suspension . ( a ) and ( b ) -Phosphor deposition at 10,000 V charging voltage showing excellent crack detection . Not ...
... decoration of defects after corona charging of insulator regions with ions of same sign as decorating particles in suspension . ( a ) and ( b ) -Phosphor deposition at 10,000 V charging voltage showing excellent crack detection . Not ...
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Common terms and phrases
Acrylic aluminum etching aluminum-metallized applications Base Sheet Resistor BEC Model bias voltage Bias-Isolation Unit brightfield Bureau of Standards C-meter capacitance capacitor Capacitor over Collector carbon black circuit cm³ computed corona charging cracks defect detection demarcation etching demarcation-etched deposition dielectric screening length diode dopant density e-e scattering effect electron mobility EMITTER etch time factor etchant film Greek Cross impurity scattering mobility integrated circuits ionized impurity scattering liquid Lubrizol mask for quadrant materials metal microcracks microscope MOS Capacitor n-type silicon National Bureau neutral impurity scattering Number Oxide surface voltage p-n junctions partial pinholes passivation layer phonon phosphor phosphorus-doped silicon photomicrographs Photoresist Program quadrant are listed Resistor Greek Cross reverse decoration S(Cs sample Semiconductor Semiconductor Measurement Technology sensitivity Sheet Resistor Greek shown in figure silicon dioxide silicon nitride suspension technical techniques test pattern NBS-4 theoretical thermal thickness total donor density wafer
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