NBS Special Publication, Issues 400-431U.S. Government Printing Office, 1977 |
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Page 28
... curve . For the samples shown , the lateral etch rate is 0.4 um / min , but the rate depends on crack width . From the photographs and the data presented in table 2 , we con- cluded that an etch time factor of 1.25 is best for maximum ...
... curve . For the samples shown , the lateral etch rate is 0.4 um / min , but the rate depends on crack width . From the photographs and the data presented in table 2 , we con- cluded that an etch time factor of 1.25 is best for maximum ...
Page 3
... curve . To simplify the theoretical calculations of μ by eqs ( 2.3 ) and ( 2.4 ) , Long [ 1 ] has assumed that the ... curves are in good agreement ( within ± 3 percent ) for temperatures between 100 and 500 K. For a more detailed ...
... curve . To simplify the theoretical calculations of μ by eqs ( 2.3 ) and ( 2.4 ) , Long [ 1 ] has assumed that the ... curves are in good agreement ( within ± 3 percent ) for temperatures between 100 and 500 K. For a more detailed ...
Page 9
... curves for both n- and p- type silicon at 300 K , using mostly previously published data . Recently Mousty et al . [ 26 ] reported the resistivity versus phosphorus density in n - type silicon . The electrical prop- erties of heavily ...
... curves for both n- and p- type silicon at 300 K , using mostly previously published data . Recently Mousty et al . [ 26 ] reported the resistivity versus phosphorus density in n - type silicon . The electrical prop- erties of heavily ...
Page 10
... curve ( curve 2 ) which was calculated from the Caughey and Thomas [ 32 ] empiri- cal formula for n - type silicon is also shown by a dashed line in figure 3. To illustrate the important effect of e - e scattering , we have also shown ...
... curve ( curve 2 ) which was calculated from the Caughey and Thomas [ 32 ] empiri- cal formula for n - type silicon is also shown by a dashed line in figure 3. To illustrate the important effect of e - e scattering , we have also shown ...
Page 12
... Curve 1 is the theoretical calculation with e - e scattering included for 1013 N < 1019 cm - 3 , curve 2 is the Irvin curve calculated from the Caughey and Thomas empirical formula [ 30 ] , curve 3 is the exact theoretical calculation ...
... Curve 1 is the theoretical calculation with e - e scattering included for 1013 N < 1019 cm - 3 , curve 2 is the Irvin curve calculated from the Caughey and Thomas empirical formula [ 30 ] , curve 3 is the exact theoretical calculation ...
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Common terms and phrases
Acrylic aluminum etching aluminum-metallized applications Base Sheet Resistor BEC Model bias voltage Bias-Isolation Unit brightfield Bureau of Standards C-meter capacitance capacitor Capacitor over Collector carbon black circuit cm³ computed corona charging cracks defect detection demarcation etching demarcation-etched deposition dielectric screening length diode dopant density e-e scattering effect electron mobility EMITTER etch time factor etchant film Greek Cross impurity scattering mobility integrated circuits ionized impurity scattering liquid Lubrizol mask for quadrant materials metal microcracks microscope MOS Capacitor n-type silicon National Bureau neutral impurity scattering Number Oxide surface voltage p-n junctions partial pinholes passivation layer phonon phosphor phosphorus-doped silicon photomicrographs Photoresist Program quadrant are listed Resistor Greek Cross reverse decoration S(Cs sample Semiconductor Semiconductor Measurement Technology sensitivity Sheet Resistor Greek shown in figure silicon dioxide silicon nitride suspension technical techniques test pattern NBS-4 theoretical thermal thickness total donor density wafer
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