NBS Special Publication, Issues 400-431U.S. Government Printing Office, 1977 |
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Page vi
... Contrast 4.6.7 Ease of Observation 4.6.8 Limitation ADVANTAGES AND DISADVANTAGES OF THE METHODS INVESTIGATED ADDITIONAL EXAMPLES OF APPLICATIONS 6.1 Metal Demarcation Etching 6.2 Metal / Insulator Sequential Etching 6.3 Electrophoretic ...
... Contrast 4.6.7 Ease of Observation 4.6.8 Limitation ADVANTAGES AND DISADVANTAGES OF THE METHODS INVESTIGATED ADDITIONAL EXAMPLES OF APPLICATIONS 6.1 Metal Demarcation Etching 6.2 Metal / Insulator Sequential Etching 6.3 Electrophoretic ...
Page viii
... contrast ) . Scratch - induced heavy damage in glass layer made visible by 20 - min aluminum etching . Scribe direction was apparently downward with increasing pressure . Sample structure as noted in figure 1 ( 385X , bright field ) ...
... contrast ) . Scratch - induced heavy damage in glass layer made visible by 20 - min aluminum etching . Scribe direction was apparently downward with increasing pressure . Sample structure as noted in figure 1 ( 385X , bright field ) ...
Page xii
... contrast renders microscopic evaluation fast and sensitive . Width of narrowest aluminum lines ( visible at right ) is about 12 μm ( 150x ) . . . . Confirmation of defect detection by the reverse - decoration method . Sample was ...
... contrast renders microscopic evaluation fast and sensitive . Width of narrowest aluminum lines ( visible at right ) is about 12 μm ( 150x ) . . . . Confirmation of defect detection by the reverse - decoration method . Sample was ...
Page 3
... contrast sample when viewed by reflectance microscopy . This is a particular advantage for process automation and was explored using a photocell mounted on the microscope to measure reflected light intensity , which was related to ...
... contrast sample when viewed by reflectance microscopy . This is a particular advantage for process automation and was explored using a photocell mounted on the microscope to measure reflected light intensity , which was related to ...
Page 14
... 50 ° C . Glass crack is dark line in center of 15-18- um - wide bands . No pinholes are present in this sample area ( 385X , Nomarski differential interference contrast ) . Figure 3 . Figure 4 . Scratch - induced heavy. 14.
... 50 ° C . Glass crack is dark line in center of 15-18- um - wide bands . No pinholes are present in this sample area ( 385X , Nomarski differential interference contrast ) . Figure 3 . Figure 4 . Scratch - induced heavy. 14.
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Common terms and phrases
Acrylic aluminum etching aluminum-metallized applications Base Sheet Resistor BEC Model bias voltage Bias-Isolation Unit brightfield Bureau of Standards C-meter capacitance capacitor Capacitor over Collector carbon black circuit cm³ computed corona charging cracks defect detection demarcation etching demarcation-etched deposition dielectric screening length diode dopant density e-e scattering effect electron mobility EMITTER etch time factor etchant film Greek Cross impurity scattering mobility integrated circuits ionized impurity scattering liquid Lubrizol mask for quadrant materials metal microcracks microscope MOS Capacitor n-type silicon National Bureau neutral impurity scattering Number Oxide surface voltage p-n junctions partial pinholes passivation layer phonon phosphor phosphorus-doped silicon photomicrographs Photoresist Program quadrant are listed Resistor Greek Cross reverse decoration S(Cs sample Semiconductor Semiconductor Measurement Technology sensitivity Sheet Resistor Greek shown in figure silicon dioxide silicon nitride suspension technical techniques test pattern NBS-4 theoretical thermal thickness total donor density wafer
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