1. 2. 3. REFERENCES Goodman, A. M., A Useful Modification of the Technique for Measuring Capacitance as a Function of Voltage, IEEE Trans. Electron Devices ED-21, 753-757 (1974). Goodman, A. M., An Investigation of the Silicon-Sapphire Interface Instruction Manual for BEC Models 71A and 71AR Capacitance/Inductance Meter, Boonton Electronics Corporation, Whippany, N.J. Semiconductor Measurement Technology: Safe Operation of 5. Publication Date December 1976 6. Performing Organization Code 8. Performing Organ. Report No. 11. Contract/Grant No. 5-35912 13. Type of Report & Period Covered Interim 14. Sponsoring Agency Code 15. SUPPLEMENTARY NOTES This work was funded by the Defense Advanced Research Projects Agency under ARPA Order 2397, Program Code 6D10. Library of Congress Catalog Card Number: 76-608338 16. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant bibliography or literature survey, mention it here.) The use of capacitance meters (C-meters) to determine small-signal (differential) capacitance at 1 MHz as a function of applied-bias voltage is widespread. The maximum value of the bias voltage which may be applied to a sample under test with any commercially available C-meter is 600 V or less. A larger bias-voltage capability is required for certain applications. This report describes a technique for using a commercial C-meter with a Bias-Isolation Unit (BIU) for capacitance measurements at bias-voltage magnitudes up to 10 kV without damage to the measurement equipment. The basic principles of operation and the details of the electrical design of a BIU are discussed. The use of the BIU imposes certain limitations on the range of sample capacitance which may be measured without introducing excessive error. The theory of these limitations is presented and compared with experimental results obtained from the use of the BIU with each of three commercially available C-meters. The measurement capability demonstrated by these results appears to be adequate for all current and future applications. For less than + 1% error in the indicated (measured) capacitance, the measurable range of the sample capacitance is found to be from 0 to at least 400 pF. In some applications, it is important to be able to accurately measure small changes in the sample capacitance; for less than + 1% error in the indicated (measured) value of a small change in the sample capacitance, the measurable range of the sample capacitance is found to be from 0 to at least 130 pF. Construction details of the BIU are appended. 17. KEY WORDS (six to twelve entries; alphabetical order; capitalize only the first letter of the first key word unless a proper name; separated by semicolons) Bias-Isolation Unit; capacitance measurements at high appliedbias voltage; capacitance-meter; extended-range capacitance measurement; high-voltage C(V) measurements; modified MIS C(V) measurements. Announcement of New Publications on Semiconductor Measurement Technology Superintendent of Documents, Government Printing Office, Dear Sir: Please add my name to the announcement list of new publications to be issued in the series: National Bureau of Standards Special Publication 400-. |