Page images
PDF
EPUB
[blocks in formation]

00001 82-11-021 SEMICONDUCTOR RESEARCH CORP PROGRAM OF MICROSCIENCE & TECHNOLOGY 00022 82-11-002 PERFORMANCE ENHANCEMENT OF VLSI THROUGH THE USE OF ADVANCED 00023 82-11-03 TRANSFER OF SOFTWARE ENGINEERING METHODOLOGY TO VLSI DESIGN 00004 82-11-004 LOW RESISTANCE OHMIC CONTACTS FOR VLSI TECHNOLOGY

MRNELL

STANFORD

UNC

eeees 82-11-025 AN INVESTIGATION OF MULTILEVEL INTERCONNECTION & REACTIVE ION
00006 82-11-006 THEORETICAL & EXPERIMENTAL INVESTIGATIONS OF THERMAL & ACCELERATED
00027 82-11-007 SRC-CMU RESEARCH CENTER FOR COMPUTER-AIDED DESIGN
00028 82-11-008 SRC-CAL/BERKELEY COMPUTER-AIDED DESIGN PROGRAM

00223 83-01-221 PHYSICS & MODELING OF HETEROSTRUCTURE SEMICONDUCTOR DEVICES
00010 83-21-002 VLSI CIRCUIT LAYOUT

82211 83-01-023 DEVELOPMENT OF A DESIGN AUTOMATION SYSTEM FOR SPEED-INDEPENDENT
002:2 83-01-004 INVESTIGATIONS OF MECHANICAL-ENVIRONMENTAL INTERACTIONS IN VLSI
002:3 83-01-025 ULTRA-COMPACTION ALGORITHMS FOR SYMBOLIC VLSI LAYOUTS
00014 83-01-02E PHYSICS & TECHNOLOGY OF MUTILEVEL INTERCONNECTIONS & CONTACTS FOR
00015 83-01-27 CHEMICAL VAPOR DEPOSITION OF REFRACTORY METALS & THEIR SILICIDES
00216 83-01-026 CHARACTERIZATION & OPTIMIZATION OF INCOHERENT LIGHT & CW LASER
00017 83-01-023 COMPLEMENTARY MESFET DEVICES FOR VLSI TECHNOLOGY
002:6 83-01-012 THERMAL NITRIDATION OF SILICON & SILICON OXIDES

20213 63-2:-2:1 POLYSILICON IN ADVANCED INTEGRATED CIRCUIT PROCESSES

00PER 83-21-012 THE PIPOLAR TRANSISTOR STRUCTURE & THE SPACE-CHARGE-LIMITED LOADS 003E1 83-21-013 DESIGN VERIFICATION & TESTING OF VLS! CIRCUITS

00232 83-01-14 DESIGN OF TESTABLE VLS: CIRCUITS

00023 63-21-2:5 VERY LOW TEMPERATURE SILICON EPITAXY

02024 83-21-RIE MOS VLSI PT LOW TEMPERATURES

02085 63-01-017 A COMPUTER AIDED DESIGN METHODOLOGY FOR ANALOG LSI/VLSI

00228 83-01-018 PROCESS-INDUCED RADIATION EFFECTS IN SMALL-DIMENSION MOS DEVICES & 02227 83-81-250 A THREE DIMENSIONAL VLSI DEVICE SIMULATOR

00028 83-01-221 AN INVESTIGATION OF MOLECULAR BEAM EPITAXY SILICIDES FOR VLSI 22229 83-01-022 ON-LINE TESTABLE VLSI PROCESSORS

00230 83-01-023 VLSI DIGITAL SIGNAL PROCESSORS

02231 83-21-RE4 APPLICATION OF ACOUSTIC MICROSCOPY TO THE EXAMINATION OF INTEGRATED
00232 83-21-225 PERFORMANCE & FAILURE ANALYSIS OF MICROELECTRONIC DEVICES BY
00233 83-01-BEE PLASMA & REACTIVE-ION ETCHING WITH FLUORINE BASE COMPOUNDS
00234 83-01-027 STUDIES OF HIGH-CONDUCTIVITY SILICIDE METALLIZATIONS FOR VLSI
00235 83-01-0EB CAD TECHNIQUES FOR VLSI LAYOUT

MINNESOTA
MISSISSIPPI STATE
ILLINOIS
CARNEGIE MELLON
CAL/BERKELEY
PURDUE
COLUMBIA
IOWA

GEORGIA TECH

KCNC
STANFORD

ARIZONA
NOTRE DAME
STANFORD
PENN STATE
CARNEGIE-MELLON
ARIZONA

ILLINOIS

ILLINOIS

MINNESOTA

VERYONT

TEXAS A&M

YALE

ARIZONA STATE

UCLA

CARNEGIE MELLON

SOUTH CAROLINA
MINNESOTA

UNC

PENN STATE
WISCONSIN

ROCHESTER

02036 83-21-029 LASER REPAIR OF TRANSPARENT VLSIC MASK MICROFAULTS

USC

00237 83-21-830 STUDIES OF THE RELIABILITY PHYSICS OF SILICON VLSI TRANSISTORS
00238 83-01-31 STUDIES OF THE ORIGIN OF Si/Si02 INTERFACE STUDIES
00239 83-01-032 HIERARCHICAL SILICON COMPILATION

ILLINOIS

STANFORD

BROWN

02240 83-01-033 THREE-DIMENSIONAL CIRCUITS & SYSTEMS TECHNOLOGY

00041 83-81-034 AN EVALUATIVE PROGRAM FOR ASSESING THE UTILITY OF CLUSTER IONS IN 00042 83-01-035 VLSI ARRAYS: APPLICATIONS & LAYOUT TECHNIQUES

MIT

JOHNS HOPKINS
ILLINOIS

00243 83-81-836 THIN INSULATORS & THEIR INTERFACES IN METAL/INSULATOR/SEMICONDUCTOR 00044 83-01-037 THE OPTIMIZATION OF POLYSIL EMITTERS

YALE

FLORIDA

00045 83-01-038 EFFICIENT METHOD FOR SIMULATING MOS INTEGRATED CIRCUITS & IT'S 00045 83-01-039 INTERFACE DEFECTS IN MUTILAYER CERAMIC SUFSTRATES

ARIZONA

CORNE !

00247 63-01-040 RESEARCH IN INTEGRATED CIRCUIT MANUFACTURING TECHNOLOGY
80348 83-01-041 ADVANCED BEAM SYSTEMS-VEHICLE FOR VLS! RESEARCH
00049 83-27-842 VLSI RELIABILITY RESEARCH PROGRAM

MCNC

RPI

00052 83-12-043 MICROSCALE STUDIES OF THE ELECTRIC PROPERTIES OF OXYGEN-INDUCED
00051 84-01-044 UCSB 6aAs DIGITAL RESEARCH CORE PROGRAM
02052 84-01-045 AUTOMATION IN SEMICONDUCTOR MANUFACTURING
00053 84-21-846 MANUFACTURING SCIENCE & TECHNOLOGY FOR VLSI
00054 84-02-047 CENTER FOR GaAs DIGITAL DEVICE RESEARCH

CLEMSON

MIT

UC/SANTA BARBARA

MICHIGAN

STANFORD

STANFORD

[merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][ocr errors][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small][merged small]

STATEMENT OF STEPHEN KAHNE, DEAN OF ENGINEERING, POLYTECHNIC INSTITUTE OF NEW YORK, BROOKLYN, NY, ON BEHALF OF THE AMERICAN SOCIETY OF ENGINEERING EDUCATION, WASHINGTON, DC

Mr. KAHNE. I am Stephen Kahne, Dean of Engineering at the Polytechnic Institute of New York. I am honored to have the opportunity to present some testimony on my behalf on behalf of my institution and on behalf of the American Society for Engineering Education, at this hearing on 2165.

Polytechnic has one of the largest graduate engineering programs in the country, and it is a private institution with about 70 percent of its income derived from tuition-a very high percentage by national standards.

The R&D credit that passed in 1981 encouraged companies to increase their expenditures in R&D generally. And I am pleased to say that many companies increased their support of research institutions. At the Polytechnic, for example, industrial support for research has increased from 4 percent of our total in 1980 to nearly 30 percent today. The incremental tax credit passed in 1981 was designed to encourage companies to increase their levels of R&D each year. University research, however, does not require constantly increasing levels of support. It requires more or less consistent and constant support for extended periods of time. The nonincremental credit for university research in 2165 is talking about not increasing R&D generally by establishing a stable higher level of collaboration between university and industry scientists. And I must emphasize the word stable. The stability of a tax credit is very important, as we plan-and as companies that we are dealing with-plan on the future. Let me mention now the equipment donations part of the bill, in particular. At the Polytechnic, we think that the 1981 legislation has had its intended effects. There has been a noticeable increase in equipment donations since the law passed. Despite the increases in donations, the condition level of instructional and research laboratories in our school—and most others in the United States-is simply terrible. Now, I can cite many cases in which our graduates are unfortunately deficient because they failed to get needed laboratory experience. Therefore, I strongly support the provision in this legislation that will grant an enhanced deduction for used equipment to be used for both research and instruction. Let me move now to the question of the enhanced deduction for service agreements. I must say that service agreements are critical. What good is equipment if we can't afford to maintain it? I understand that this question of service agreements is controversial at the Treasury and at the IRS because of some precedent that they may be concerned about. I suggest that, instead of granting the enhanced deduction for service agreements, grant the enhanced deduction for equipment that is guaranteed to operate successfully for 5 years. Therefore, we can bill service into the cost of the equipment. I would like to conclude by congratulating the sponsors of this legislation for perceptively using the Tax Code to enhance the

university-industry relationship, which in turn will provide for improved industrial products and processes and for better trained scientists and engineers in the United States. Thank you.

Senator CHAFEE. Thank you.

[The prepared statement follows:]

STATEMENT OF STEPHEN KAHNE, DEAN OF ENGINEERING, POLYTECHNIC INSTITUTE OF NEW YORK ON BEHALF OF AMERICAN SOCIETY FOR ENGINEERING EDUCATION

I am Stephen Kahne, Dean of Engineering at the Polytechnic Institute of New York. I am honored to have the opportunity to testify at this hearing. My institution was created in 1973 from the merger of the Polytechnic Institute of Brooklyn and the Engineering College of New York University. We are a large

technological university and annually we graduate one of the largest classes in the country of students with masters of engineering degrees. The Institute is a private institution with 70% of its income derived from tuition, a high percentage by

[blocks in formation]

I am also testifying on behalf of the American Society for
Engineering Education, which is composed of 9,500 individual

members and 550 institutional members, consisting of accredited schools of engineering and engineering technology and more than one hundred major corporate employers of engineers and engineering technologists.

It is important to note at the outset that high technology companies in New York City and in many other areas of the country do not have the same tradition of working closely with local universities that we find in the Silicon Valley and in the Boston Fortunately, there have been indications of change which I

area.

will describe in a minute.

« PreviousContinue »